Effect of rapid thermal annealing on the electrical and structural properties of Ru/n‐InP (100) Schottky rectifiers

Abstract

The effects of rapid thermal annealing on the electrical and structural properties of Ru/n‐InP Schottky diode have been investigated by current–voltage (I–V), capacitance–voltage (C–V), X‐ray diffraction (XRD) and secondary ion‐mass spectroscopy (SIMS) techniques. Results showed that the Schottky barrier height of the as‐deposited Ru/n‐InP has been found to be 0.53 eV (I–V) and 0.69 eV (C–V). The Schottky barrier height increased to 0.54 eV (I–V) 0.73 eV (C–V), 0.56 eV (I–V) and 0.78 eV (C–V) after annealing at 300 and 400 °C for 1 min in nitrogen ambient. Further increase in the annealing temperature up to 500 °C resulted in the increase of barrier height to 0.57 eV (I–V) and 0.80 eV (C–V). However, after annealing at temperature 600 °C, the barrier height decreases to 0.51 eV (I–V) and 0.67 eV (C–V). Based on the results of XRD and SIMS studies, the formation of indium phases at Ru/n‐InP interface could be the reason for the increase of barrier height upon annealing at 500 °C. The atomic force microscopy results showed that the surface morphology of the contact annealed at 600 °C is fairly smooth with a root mean square roughness of 1.8 nm.

Structural, electrical, and surface morphological characteristics of rapidly annealed Pt/Ti Schottky contacts to n‐type InP

“…The increase in the SBH is always accompanied by a corresponding reduction in the reverse leakage current. This finding is consistent with the results previously reported by Bhaskar Reddy et al 35 and Janardhanam et al 36. They reported that the formation of indium phases at the interface could be the reason for increase of SBHs upon annealing temperature.…”

Transport mechanisms and interface properties of W/p-InP Schottky diode at room temperature

“…It is noted that the SBH obtained from the C-V measurements is higher than that obtained from the I-V measurements. Such a discrepancy between barrier heights obtained from the I-V and C-V measurements can be associated with the spatial inhomogeneity of the barrier height at the W/p-InP interface [34][35][36]. The inhomogeneous interface consists of Schottky barrier patches having low and high SBHs distributed across the interface between W and p-InP resulting in a localized Schottky barrier inhomogeneity at the interface.…”

Electrical and structural properties of Pd/V/n‐type InP (111) Schottky structure as a function of annealing temperature

“…Effort has been made by several groups to form Schottky contacts on InP using a number of metal schemes 8–17. Haung et al 8 prepared double metal structure Pt/Al/ n ‐InP diode, reported that the effective barrier height is 0.74 eV with an ideality factor n = 1.11.…”

“…Janardhanam et al 13 studied the effect of annealing temperature on electrical and structural properties of Mo/ n ‐InP (100) Schottky contacts and reported that the barrier height of the as‐deposited contact is increased upon annealing at 300 °C for 1 min in N 2 ambient. Janardhanam et al 14 investigated the effect of rapid thermal annealing on the electrical and structural properties of Ru/ n ‐InP (100) Schottky diodes. They found that the barrier height of the as‐deposited Schottky diode was found to be 0.53 eV (I–V) and 0.69 eV (C–V).…”