Electrical and structural properties of Pd/V/n‐type InP (111) Schottky structure as a function of annealing temperature

Abstract

• C for 1 min. It is observed that the Schottky barrier height of the contact slightly decreases after annealing at 300, 400 and 500• C for 1 min in N 2 atmosphere. From the above observations, it is clear that the electrical characteristics of Pd/V Schottky contacts improve after annealing at 200• C. This indicates that the optimum annealing temperature for the Pd/V Schottky contact is 200• C. Basing on the auger electron spectroscopy and X-ray diffraction results, the formation of Pd-In intermetallic compound at the interface may be the reason for the increase of barrier height upon annealing at 200• C. The formation of phosphide phases at the Pd/V/n-InP interface could be the reason for the degradation in the barrier heights after annealing at 300, 400 and 500• C. From the AFM results, it is evident that the overall surface morphology of the Pd/V Schottky contacts is fairly smooth.

Thermo photo-electrochemical effect in n-InP/aqueous solution of orange dye/C cell

“…[22] III-V metal semiconductors have been investigated for last few decades and are considered as potential candidates for power generation due to larger direct band gap, high electron mobility, maximum saturation velocity and breakdown voltage. [45,46] The distinctive feature of Indium Phosphide (InP) is high electron velocity as compared to conventional semiconductors, i.e. Si and GaAs, and enables it to be used in high power and high frequency electronic devices.…”