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We report the development of a hybrid semiconductor–metal–semiconductor permeable‐base transistor in vertical architecture, which operates by positive charge carrier transport. This transistor has a p‐type silicon collector, a thin tin layer as base and a conjugated polymer, poly(9,9‐dioctyl‐2,7‐ fluorenylenevinylene), as emitter material. The transistor transport characteristics are dependent on the applied magnetic field and the base transport factor for positive charge carriers is nearly ideal. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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