Magnetoresistive hybrid transistor in vertical architecture

Abstract

We report the development of a hybrid semiconductor–metal–semiconductor permeable‐base transistor in vertical architecture, which operates by positive charge carrier transport. This transistor has a p‐type silicon collector, a thin tin layer as base and a conjugated polymer, poly(9,9‐dioctyl‐2,7‐ fluorenylenevinylene), as emitter material. The transistor transport characteristics are dependent on the applied magnetic field and the base transport factor for positive charge carriers is nearly ideal. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

All Solution‐Processed Inorganic/Organic Hybrid Permeable Metal‐Base Transistor

“…We also measured the emitter current as a function of the emitter‐base bias ( V EB ) under the common‐base configuration and the results shown in the Supporting Information (Figure S2) clearly demonstrate that J E is controlled by V EB . Attributed to the high electrical conductivity of NiO, at a V EB value of 4.2 V, we achieve a high value of J E (25 mA/cm 2 ), which is significantly higher than most values reported for p ‐type PMBTs . Based on the results of our common‐base measurements, we demonstrate the transistor action is due to the porosity of the Al base electrode.…”

Síntese de poli(1,1'-ferrocenilenovinileno) via acoplamento de McMurry

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dispositivos eletroluminescentes [15] e, mais recentemente, com células solares [16] , transistores magnéticos [17][18][19] e narizes eletrônicos [20][21][22] . A combinação da eletroafinidade dos metais de transição com as propriedades eletrônicas dos polímeros conjugados é uma estratégia atrativa para gerar polímeros híbridos, combinando propriedades físicas, eletrônicas e magnéticas propícias para diversas aplicações.

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