A new structure for a symmetric bipolar charge-plasma transistor device with an extruded base is proposed. The charge plasma and extruded base concepts are used to increase the current gain and cutoff frequency of the proposed device, respectively. Metal contact hafnium accumulates electrons in the emitter/collector (E/C) regions and platinum accumulates holes in the base region. Using the metal contact of different work functions, the electrons and holes are accumulated in a lightly doped silicon film to create the E/C and the base regions, respectively. Two-dimensional simulations of the proposed device demonstrate that it has a higher current gain of 9 × 10 6 and a peak cutoff frequency (f T) of 87.3 GHz. Furthermore, the f T for different silicon film thicknesses and base widths is optimised.
A comparative evaluation of channel hot carrier (CHC) reliability and pursuance of dopingless FET (DL JLFET) and junctionless FET (JLFET) are studied for various dielectrics and compared with conventional dielectric (SiO 2 ) JLFET. The use of dielectrics such as vacuum near the drain and the high-κ (HfO 2 ) near the source in DL JLFET (VacuHDL JLFET) allows better pursuance and reliability against channel hot carrier (CHC) effects. A simulation study has shown that the pursuance of VacuHDL in terms of I on /I off ratio is improved by 4.5, 19.38 and 39.58 times, respectively, in comparison with vacuum based DL, HJL and JL. Similarly, the intrinsic delay of VacuHDL is improved by 9.5%, 56.8 % and 58.7 %, respectively, in comparison with VacuDL, VacuHJL and VacuJL. Hence, VacuHDL is a potential candidate for digital circuit applications. Further, we have found that vacuum-based HDL and HJL are more immunes against CHC stress and shown that the drain current of vacuHDL and vacuHJL is reduced by 6.9 % and 17.5 %, respectively, in comparison with conventional dialectic (SiO 2 ) based DL and JL which is 10.4 % and 20.5 %. Hence, the incorporation of vacuum dielectric towards drain terminal is helpful in reducing CHC induced effect in comparison with conventional dielectric.
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