Graphene exhibits properties of atomic thickness, high transparency, and high carrier mobility, which is highly desirable for a flexible transparent conductive material. However, the electronic properties of large-area chemical vapor deposition grown graphene film suffer from insulated polymer contaminations introduced by the transfer process and the easily cracked nature. Here, we report a preparation method of a transfermedium-free large-area nanofiber-reinforced graphene (a-PAN/G) film simply by annealing the electrostatically spun polyacrylonitrile (PAN) nanofibers on the graphene film. The film could be free-standing on water and suspended in air with high transparency and enhanced electrical and mechanical properties compared to that of a monolayer graphene film. The flexible transparent a-PAN/G films were demonstrated as active materials for sensitive pressure sensors. The obtained pressure sensors demonstrate high sensitivity (44.5 kPa −1 within 1.2 kPa), low operating voltage (0.01−0.5 V), and excellent stability for 5500 loading− unloading cycles, revealing promising potential applications in wearable electronics.
Plasma-enhanced chemical vapor deposition (PECVD) is an applicable route to achieve low-temperature growth of graphene, typically shaped like vertical nanowalls. However, for transparent electronic applications, the rich exposed edges and high specific surface area of vertical graphene (VG) nanowalls can enhance the carrier scattering and light absorption, resulting in high sheet resistance and low transmittance. Thus, the synthesis of laid-down graphene (LG) is imperative. Here, a Faraday cage is designed to switch graphene growth in PECVD from the vertical to the horizontal direction by weakening ion bombardment and shielding electric field. Consequently, laid-down graphene is synthesized on low-softening-point soda-lime glass (6 cm × 10 cm) at ≈580 °C. This is hardly realized through the conventional PECVD or the thermal chemical vapor deposition methods with the necessity of high growth temperature (1000 °C-1600 °C). Laid-down graphene glass has higher transparency, lower sheet resistance, and much improved macroscopic uniformity when compare to its vertical graphene counterpart and it performs better in transparent heating devices. This will inspire the next-generation applications in low-cost transparent electronics.
High-quality graphene film grown on dielectric substrates by a direct chemical vapor deposition (CVD) method promotes the application of high-performance graphene-based devices in large scale. However, due to the noncatalytic feature of insulating substrates, the production of graphene film on them always has a low growth rate and is time-consuming (typically hours to days), which restricts real potential applications. Here, by employing a local-fluorine-supply method, we have pushed the massive fabrication of a graphene film on a wafer-scale insulating substrate to a short time of just 5 min without involving any metal catalyst. The highly enhanced domain growth rate (∼37 nm min −1 ) and the quick nucleation rate (∼1200 nuclei min −1 cm −2 ) both account for this high productivity of graphene film. Further first-principles calculation demonstrates that the released fluorine from the fluoride substrate at high temperature can rapidly react with CH 4 to form a more active carbon feedstock, CH 3 F, and the presence of CH 3 F molecules in the gas phase much lowers the barrier of carbon attachment, providing sufficient carbon feedstock for graphene CVD growth. Our approach presents a potential route to accomplish exceptionally large-scale and high-quality graphene films on insulating substrates, i.e., SiO 2 , SiO 2 /Si, fiber, etc., at low cost for industry-level applications.
The direct growth of vertically oriented graphene (VG) on low-priced, easily accessible soda-lime glass can propel its applications in transparent electrodes and energy-relevant areas. However, graphene deposited at low temperature (∼600 °C) on the catalysis-free insulating substrates usually presents high defect density, poor crystalline quality, and unsatisfactory electrical conductivity. To tackle this issue, we select high borosilicate glass as the growth substrate (softening point ∼850 °C), which can resist higher growth temperature and thus afford higher graphene crystalline quality, by using a radio-frequency plasma-enhanced chemical vapor deposition (rf-PECVD) route. A nitrogen doping strategy is also combined to tailor the carrier concentration through a methane/acetonitrile-precursor-based synthetic strategy. The sheet resistance of as-grown nitrogen-doped (N-doped) VG films on high borosilicate glass can thus be lowered down to ∼2.3 kΩ•sq −1 at a transmittance of 88%, less than half of the methane-precursor-based PECVD product. Significantly, this synthetic route allows the achievement of 30-inch-scale uniform N-doped graphene glass, thus promoting its applications as excellent electrodes in high-performance switchable windows. Additionally, such N-doped VG films were also employed as efficient electrocatalysts for electrocatalytic hydrogen evolution reaction.
The direct synthesis of low sheet resistance graphene on glass can promote the applications of such intriguing hybrid materials in transparent electronics and energy-related fields. Chemical doping is efficient for tailoring the carrier concentration and the electronic properties of graphene that previously derived from metal substrates. Herein, we report the direct synthesis of 5 in. uniform nitrogen-doped (N-doped) graphene on the quartz glass through a designed low-pressure chemical vapor deposition (LPCVD) route. Ethanol and methylamine were selected respectively as precursor and dopant for acquiring predominantly graphitic-N-doped graphene. We reveal that by a precise control of growth temperature and thus the doping level the sheet resistance of graphene on glass can be as low as one-half that of nondoped graphene, accompanied by relative high crystal quality and transparency. Significantly, we demonstrate that this scalable, 5 in. uniform N-doped graphene glass can serve as excellent electrode materials for fabricating high performance electrochromic smart windows, featured with a much simplified device structure. This work should pave ways for the direct synthesis and application of the new type graphene-based hybrid material.
Direct growth of vertically oriented graphene (VG) nanowalls on soda-lime glass has practical significance in extending the application of graphene to daily-life-related areas, such as gas sensors and conductive electrodes, via combining their complementary properties and applications. However, VG films derived by lowtemperature deposition (e.g., on glass) usually present relatively low conductivity and optical transparency. To tackle this issue, an ethanolprecursor-based, radio-frequency plasma-enhanced chemical vapor deposition (rf-PECVD) route for the synthesis of VG nanowalls is developed in this research, at around the softening temperature of soda-lime glass (∼600 °C) templates. The average sheet resistance, i.e., ∼2.4 kΩ•sq −1 (at transmittance ∼81.6%), is only one-half of that achieved by a traditional methane-precursor-based PECVD route. Based on the highly conductive and optically transparent VG/glass, as well as its scalable size up to 25 in. scale, highperformance reversible thermochromic devices were successfully constructed using VG/glass as transparent heaters. Hereby, this work should propel the scalable synthesis and applications of highly conductive VG films on glass in next-generation transparent electronics and switchable windows.
Growing high quality graphene films directly on glass by chemical vapor deposition (CVD) meets a growing demand for constructing high-performance electronic and optoelectronic devices. However, the graphene synthesized by prevailing methodologies is normally of polycrystalline nature with high nucleation density and limited domain size, which significantly handicaps its overall properties and device performances. Herein, we report an oxygen-assisted CVD strategy to allow the direct synthesis of 6-inch-scale graphene glass harvesting markedly increased graphene domain size (from 0.2 to 1.8 m). Significantly, as-produced graphene glass attains record high electrical conductivity (realizing a sheet resistance of 900 Ω•sq −1 at a visible-light transmittance of 92%) amongst the state-of-the-art counterparts, readily serving as transparent electrodes for fabricating high-performance optical filter devices. This work might open a new avenue for the scalable production and application of emerging graphene glass materials with high quality and low cost.
Ultrasonic transducers with large output power have attracted extensive attentions due to their widespread applications in sonar, acoustic levitation, ultrasonic focusing, and so forth. However, the traditional transducer has almost no heat-dissipation capability itself, strictly relying on the assistant coolant system. Introducing high-performance heat-dissipation component is thus highly necessary. Herein, an embedded porcelain radiator component was designed by combining the excellent thermal conductivity of vertically oriented graphene (VG) with the outstanding heatdissipation characteristics of thermosensitive ceramics, and a newtype transducer with an embedded VG/ceramic-hybrid radiator was constructed to show high heat-dissipation efficiency (up to ∼5 °C/min). Remarkably, prominent heat-dissipation effectiveness (temperature decline of ∼12 °C), enhanced amplitude and vibration uniformity were also achieved for the new-type transducer along with stabilized operating states. This research should pave ways for extending the applications of VG/ceramic hybrids to heatdissipation scenarios and provide newfangled thoughts for the performance upgrade of multitudinous high-power devices.
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