Single-walled carbon nanotubes (CNTs) may enable the fabrication of integrated circuits smaller than 10 nanometers, but this would require scalable production of dense and electronically pure semiconducting nanotube arrays on wafers. We developed a multiple dispersion and sorting process that resulted in extremely high semiconducting purity and a dimension-limited self-alignment (DLSA) procedure for preparing well-aligned CNT arrays (within alignment of 9 degrees) with a tunable density of 100 to 200 CNTs per micrometer on a 10-centimeter silicon wafer. Top-gate field-effect transistors (FETs) fabricated on the CNT array show better performance than that of commercial silicon metal oxide–semiconductor FETs with similar gate length, in particular an on-state current of 1.3 milliamperes per micrometer and a recorded transconductance of 0.9 millisiemens per micrometer for a power supply of 1 volt, while maintaining a low room-temperature subthreshold swing of <90 millivolts per decade using an ionic-liquid gate. Batch-fabricated top-gate five-stage ring oscillators exhibited a highest maximum oscillating frequency of >8 gigahertz.

Carbon nanotube (CNT) field-effect transistor (FET)-based biosensors have shown great potential for ultrasensitive biomarker detection, but challenges remain, which include unsatisfactory sensitivity, difficulty in stable functionalization, incompatibility with scalable fabrication, and nonuniform performance. Here, we describe ultrasensitive, label-free, and stable FET biosensors built on polymer-sorted high-purity semiconducting CNT films with wafer-scale fabrication and high uniformity. With a floating gate (FG) structure using an ultrathin Y 2 O 3 high-κ dielectric layer, the CNT FET biosensors show amplified response and improved sensitivity compared with those sensors without Y 2 O 3 , which is attributed to the chemical gate-coupling effect dominating the sensor response. The CNT FG-FETs are modified to selectively detect specific disease biomarkers, namely, DNA sequences and microvesicles, with theoretical record detection limits as low as 60 aM and 6 particles/mL, respectively. Furthermore, the biosensors exhibit highly uniform performance over the 4 in. wafer as well as superior bias stress stability. The FG CNT FET biosensors could be extended as a universal biosensor platform for the ultrasensitive detection of multiple biological molecules and applied in highly integrated and multiplexed all CNT-FET-based sensor architectures.

No abstract

Along with ultralow-energy delay products and symmetric complementary polarities, carbon nanotube field-effect transistors (CNT FETs) are expected to be promising building blocks for energy-efficient computing technology. However, the work frequencies of the existing CNT-based complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) are far below the requirement (850 MHz) in state-of-art wireless communication applications. In this work, we fabricated deep submicron CMOS FETs with considerably improved performance of n-type CNT FETs and hence significantly promoted the work frequency of CNT CMOS ICs to 1.98 GHz. Based on these high-speed and sensitive voltage-controlled oscillators, we then presented a wireless sensor interface circuit with working frequency up to 1.5 GHz spectrum. As a preliminary demonstration, an energy-efficient wireless temperature sensing interface system was realized combining a 150 mAh flexible Li-ion battery and a flexible antenna (center frequency of 915 MHz). In general, the CMOS-logic high-speed CNT ICs showed outstanding energy efficiency and thus may potentially advance the application of CNT-based electronics.

Monolithic optoelectronic integration based on a single material is a major pursuit in the fields of nanophotonics and nanoelectronics in order to meet the requirements of future fiber-optic telecommunication systems and on-chip optical interconnection systems. However, the incompatibility between silicon-based electronics and germanium or compound semiconductor-based photonics makes it very challenging to realize optoelectronic integration based on a single material. Here, the integration between silicon waveguides and a carbon nanotube (CNT) optoelectronic system is demonstrated. Waveguide-integrated photodetectors based on the CNT exhibit 12.5 mA/W photoresponsivity at 1530 nm, which presents an improvement of 97.6 times enhanced absorption efficiency compared to that without the waveguide. Multiplied output signals of cascading photodetectors are used to control the output of CNT-based logic gates, thereby demonstrating that the CNT-based optoelectronic integration system is compatible with silicon photonics. Our work indicates that carbon nanotubes have the potential for future integration between nanophotonics and nanoelectronics on a single chip.

Availability of sufficient light for growth optimization of plants in greenhouse environment during winter is a major challenge, as light during winter is significantly lower than that in the summer. The most commonly used artificial light sources (e.g., metal halide lamps, high pressure sodium lamps, and high fluorescent lamps) are of low quality and inefficient. Therefore, better options should be developed for sustaining agricultural food production during low levels of solar radiation. In recent advances, light-emitting diodes (LEDs) have remarkable potential as supplemental source of light for promoting plant growth. LEDs are novel and versatile source of light with cool emitting surface, wavelength specificity, and low electric power requirement. In the present study, we provided a contemporary synthesis of existing evidence along with our hypothetical concepts to clarify how LED approach could be an efficient and cost-effective source of light for plant growth and development especially in closed production system. In comparative analysis of common artificial vs. LED lighting, we revealed that spectral quality of LEDs can have vivid effects on plant morphogenesis and anatomy. We also discussed the influence of different colors of LEDs on growth performance of plants and provided the cost benefit analysis of using LEDs compared with other traditional sources. Overall, we hope that this article will be of great worth in future due to its practical implications as well as research directions.

In this letter, we report a gate engineering method to adjust threshold voltage of carbon nanotube (CNT) based field-effect transistors (FETs) continuously in a wide range, which makes the application of CNT FETs especially in digital integrated circuits (ICs) easier. Top-gated FETs are fabricated using solution-processed CNT network films with stacking Pd and Sc films as gate electrodes. By decreasing the thickness of the lower layer metal (Pd) from 20 nm to zero, the effective work function of the gate decreases, thus tuning the threshold voltage (Vt) of CNT FETs from −1.0 V to 0.2 V. The continuous adjustment of threshold voltage through gate engineering lays a solid foundation for multi-threshold technology in CNT based ICs, which then can simultaneously provide high performance and low power circuit modules on one chip.

Handling the explosion of massive data not only requires signi cant improvements in information processing, storage and communication abilities of hardware but also demands higher security in the storage and communication of sensitive information. As a type of hardware-based security primitives, physically unclonable functions (PUFs) represent a promising emerging technology utilizing random imperfections existing in a physical entity, which cannot be predicted or cloned. However, if a PUF is exploited to carry out secure communication, the keys inside it must be written into non-volatile memory and then shared with other participants that do not hold the PUF, which makes the keys vulnerable. Here, we show that identical PUFs, e.g. twin PUFs can be fabricated on the same aligned carbon nanotube arrays and optimized to yield excellent uniformity, uniqueness, randomness, and reliability. The twin PUFs show a good consistency of approximately 95 % and are used to demonstrate secure communication with a bit error rate reduced to one trillion through a fault-tolerant design. As a result, our twin PUFs offering a convenient, low-cost and reliable new technology for guarantee information exchange security.