Single-walled carbon nanotubes (CNTs) may enable the fabrication of integrated circuits smaller than 10 nanometers, but this would require scalable production of dense and electronically pure semiconducting nanotube arrays on wafers. We developed a multiple dispersion and sorting process that resulted in extremely high semiconducting purity and a dimension-limited self-alignment (DLSA) procedure for preparing well-aligned CNT arrays (within alignment of 9 degrees) with a tunable density of 100 to 200 CNTs per micrometer on a 10-centimeter silicon wafer. Top-gate field-effect transistors (FETs) fabricated on the CNT array show better performance than that of commercial silicon metal oxide–semiconductor FETs with similar gate length, in particular an on-state current of 1.3 milliamperes per micrometer and a recorded transconductance of 0.9 millisiemens per micrometer for a power supply of 1 volt, while maintaining a low room-temperature subthreshold swing of <90 millivolts per decade using an ionic-liquid gate. Batch-fabricated top-gate five-stage ring oscillators exhibited a highest maximum oscillating frequency of >8 gigahertz.

Human-Object Interaction (HOI) Detection is an important problem to understand how humans interact with objects. In this paper, we explore Interactiveness Knowledge which indicates whether human and object interact with each other or not. We found that interactiveness knowledge can be learned across HOI datasets, regardless of HOI category settings. Our core idea is to exploit an Interactiveness Network to learn the general interactiveness knowledge from multiple HOI datasets and perform Non-Interaction Suppression before HOI classification in inference. On account of the generalization of interactiveness, interactiveness network is a transferable knowledge learner and can be cooperated with any HOI detection models to achieve desirable results. We extensively evaluate the proposed method on HICO-DET and V-COCO datasets. Our framework outperforms state-of-the-art HOI detection results by a great margin, verifying its efficacy and flexibility. Code is available at https://github.com/DirtyHarryLYL/ Transferable-Interactiveness-Network.

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Zinc dendrite growth is controlled by electrolyte flow at high current densities, effectively extending the cycle life of rechargeable zinc–air batteries.

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238 wileyonlinelibrary.com COMMUNICATION available highly purifi ed CNTs, with reported purity of up to 99.9% or even higher. [ 22 ] Another factor leads to the slow progress on the development of high-performance CNT IR detectors is that device structure and operation mode have not been optimized for solution-processed CNTs to achieve performance comparable with that of state-of-the-art commercial IR detectors. [ 23,24 ] In this letter, we show that high-performance photodiodes can be constructed using solution-processed CNTs via a dopingfree technique. In contrast to other photodetectors that use photocurrent as the signal, [ 8,[11][12][13][14][15][16][17][18][19][20] here we exploit using photovoltage as the signal. The major benefi t of using photovoltage is that the commonly occurring shot noise and 1/ f noise can be signifi cantly suppressed. In addition, signal can be multiplied via introducing virtual contacts, which leads to further improvement on signal-to-noise ratio. A prototype CNT IR detector is demonstrated, which works at room temperature and shows broadband response, high responsivity and detectivity that are comparable to that of state-of-the-art room temperature semiconductor IR detectors. It is also demonstrated that our CNT IR detectors have excellent stability, as a result of the dopingfabrication process used here, with time, under high power illumination and at rigorous temperature conditions. An array of 150 × 150 photodetectors on a single chip is fabricated, with tested yield of 100% and high device uniformity, showing the potential for large-scale fabrication capability and imager applications.In a typical photovoltaic device, a built-in fi eld is essential for the effi cient separation of photoinduced electron-hole pairs. For CNT-based diodes, ideal rectifi cation behavior has been realized by using split gates or asymmetric contacts on individual CNTs. [ 9,10,13 ] However, light absorption in these devices is usually very weak. It is thus advantageous to construct a photodiode using CNT fi lm with more CNTs in the device channel. However, solution-processed CNT-fi lm-based diodes showing excellent rectifi cation effect have not been realized. [ 23,24 ] Here, we show that such high-performance diode based on solutionprocessed CNT fi lm can be realized by using a doping-free technique in a barrier-free-bipolar diode (BFBD) device geometry as depicted in Figure 1 a. In this device geometry, Sc and Pd are asymmetrically contacted to a CNT fi lm made by a liquidphase deposition technique on an n + silicon/SiO 2 substrate (see Figure S1a,b, Supporting Information). Thus, p-region and n-region are automatically formed adjacent to the contacts by charge transfer from the contacts. This process involves no intentionally introduced dopants, no extra defects on CNTs,

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