In
this work, we report on the synthesis of InSe nanobelts through
a catalyst-free chemical vapor deposition (CVD) growth approach. A
remarkable blue shift of the peak photoresponse was observed when
the thickness of the InSe nanobelt decreases from 562 to 165 nm. Silvaco
Technology Computer Aided Design (TCAD) simulation reveals that such
a shift in spectral response should be ascribed to the wavelength-dependent
absorption coefficient of InSe, for which incident light with shorter
wavelengths will be absorbed near the surface, while light with longer
wavelengths will have a greater penetration depth, leading to a red
shift of the absorption edge for thicker nanobelt devices. Considering
the above theory, three kinds of photodetectors sensitive to blue
(450 nm), green (530 nm), and red (660 nm) incident light were achieved
by tailoring the thickness of the nanobelts, which can enable the
spectral reconstruction of a purple “H” pattern, suggesting
the potential application of 2D layered semiconductors in full-color
imaging.
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