“…[
52 ] The dependence of photocurrent on light intensity is fitted with a power function:
where θ is the empirical value reflecting the photogenerated carrier complexation, I ph is the net photocurrent ( I ph = I light – I dark ), and P is the light intensity. [
1 ] Accordingly, the fitted values are 0.32 under −0.15 V and 0.87 under 0 V at 950 nm, 0.42 under −0.15 V and 0.58 under +0.15 V at 2000 nm. Compared to operating at zero bias, the device shows a lower fitted value and LDR under a bias voltage, indicating that the device is more affected by the recombination under bias.…”