Wavelength-Tunable Multispectral Photodetector With Both Ultraviolet and Near-Infrared Narrowband Detection Capability

Wang, Li; Chen, Bo-Han; Fang, Chang-Yue; He, Jun; Wu, Chunyan; Zhang, Xiang; Yang, Xiaoping; Mao, Jianwei; Hu, Jigang; Luo, Lin‐Bao

doi:10.1109/ted.2022.3171501

Cited by 7 publications

(4 citation statements)

References 34 publications

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“…Notably, the FWHM at the same time can reach as low as 26 nm (Figure 2d). To our best knowledge, this presents the narrowest spectral response at 895 and 912 nm among the existing Si‐based NIR PDs according to literatures [ 41–45 ] as shown in Figure 2e. Also, we measured a commercial Si PD with an optical filter (NP900 nm) and the FWHM exhibits 59 nm (Figure S5, Supporting Information).…”

Section: Resultsmentioning

confidence: 83%

“…Herein, we report the development of a narrowband NIR PD based on nanograting Si/organic (PBDBT-DTBT:BTP-4F) integrated heterojunction devices, demonstrating a 40-fold enhanced external quantum efficiency (EQE), fast response of 74 μs with a FWHM as narrow as 26 nm, reaching the narrowest response peak by far among the existing Si-based NIR PDs. [41][42][43][44][45] The introduction of a conformal organic layer right above a Si nanopatterned substrate (Grating 1) has formed the secondary periodic nanograting (Grating 2) site, creating an inherently periodic microcavities for resonant enhancement to realize sharp and narrow band response peak. The response peak could be effectively tuned from 895 to 977 nm by increasing the thickness of the asdeposited organic layer.…”

Section: Introductionmentioning

confidence: 99%

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Si/Organic Integrated Narrowband Near‐Infrared Photodetector

Sun

Min

et al. 2023

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Spectrally selective narrowband photodetection is critical for near‐infrared (NIR) imaging applications, such as for communicationand night‐vision utilities. It is a long‐standing challenge for detectors based on silicon, to achieve narrowband photodetection without integrating any optical filters. Here, this work demonstrates a NIR nanograting Si/organic (PBDBT‐DTBT:BTP‐4F) heterojunction photodetector (PD), which for the first time obtains the full‐width‐at‐half‐maximum (FWHM) of only 26 nm and fast response of 74 µs at 895 nm. The response peak can be successfully tailored from 895 to 977 nm. The sharp and narrow response NIR peak is inherently attributed to the coherent overlapping between the NIR transmission spectrum of organic layer and diffraction enhanced absorption peak of patterned nanograting Si substrates. The finite difference time domain (FDTD) physics calculation confirms the resonant enhancement peaks, which is well consistent with the experiment results. Meanwhile, the relative characterization indicates that the introduction of the organic film can promote carrier transfer and charge collection, facilitating efficient photocurrent generation. This new device design strategy opens up a new window in developing low‐cost sensitive NIR narrowband detection.

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Section: Resultsmentioning

confidence: 83%

Section: Introductionmentioning

confidence: 99%

Si/Organic Integrated Narrowband Near‐Infrared Photodetector

Sun

Min

et al. 2023

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“…[ 52 ] The dependence of photocurrent on light intensity is fitted with a power function:

\begin{eqnarray}{I}_{{\rm{ph}}} = {P}^\theta \end{eqnarray}

where θ is the empirical value reflecting the photogenerated carrier complexation, I ph is the net photocurrent ( I ph = I light – I dark ), and P is the light intensity. [ 1 ] Accordingly, the fitted values are 0.32 under −0.15 V and 0.87 under 0 V at 950 nm, 0.42 under −0.15 V and 0.58 under +0.15 V at 2000 nm. Compared to operating at zero bias, the device shows a lower fitted value and LDR under a bias voltage, indicating that the device is more affected by the recombination under bias.…”

Section: Resultsmentioning

confidence: 97%

“…Multispectral photodetectors (PDs) are new optoelectronic devices capable of efficiently detecting photons in multiple wavelength ranges, [1] providing better discrimination in clutter and the ability to distinguish desired targets and decoys. [2,3] Optical devices operating in the near-infrared (NIR: 750-1100 nm) DOI: 10.1002/adfm.202214996 and short-wave infrared (SWIR: 1100-3000 nm) spectral ranges have been widely used in various civil and military applications, as these regions contain a wealth of information not accessible to the wavelength ranges of visible (VIS), ultraviolet, etc.…”

Section: Introductionmentioning

confidence: 99%

Bias‐Selectable Si Nanowires/PbS Nanocrystalline Film n–n Heterojunction for NIR/SWIR Dual‐Band Photodetection

Luo

Wang

et al. 2023

Adv Funct Materials

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In this study, a solution method derived dual-band photodetector (PD) based on silicon nanowires /PbS nanocrystalline film n-n heterojunction, which exhibits typical bias-selectable spectral response in both near-infrared (NIR) and short-wave infrared (SWIR) bands, is presented. It is found that by adjusting the polarity of the bias voltage, the photoresponse of the device can be switched between three operation modes. The device exhibits high responsivities of 2100 mA W −1 at −0.15 V and 31 mA W −1 at 0 V, respectively, in the NIR region. Remarkably, the maximum responsivity and detectivity under 2000 nm illumination are determined as 290 mA W −1 and 2.4 × 10 10 Jones, comparable to or even better than some PbS commercial PDs. The enhanced performance comes from the improved optical absorption and higher efficiency of charge separation and collection owing to the heterojunction geometry. It's also revealed that the bias-controllable spectral response is attributed to the selectively transportation of photocarriers across the junction barrier. The study demonstrates the capability of detecting two distinct IR regions with the same pixel, which has great potential in future optoelectronic systems for IR imaging applications.

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Polarization‐Enhanced Narrow‐Band GeS₂ 2‐D SWIR Spectral Phototransistor

Liu,

Guo,

et al. 2024

Adv Funct Materials

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Integrated computational spectrometers with gate‐tunable nano heterostructures and reconstruction algorithms are attractive for on‐chip gas‐sensing spectrometers and have enabled versatile spectrum detectors. However, they require the selective and optical filtering capabilities of wavelengths, restricting their efficient implementation in narrow‐band photodetection. In this study, a printable spectral phototransistor is developed with high dynamic detectivity (1012 Jones and 105 Hz at −3 db bandwidth) modulated by a GeS2 nanosheet heterostructure at short‐wave infrared (SWIR) regime. Using the transport mode switching of carriers in a heterostructure and the polarization‐sensitivity of the GeS2 two‐dimension (2‐D) nanosheet, this SWIR spectral phototransistor demonstrates an accurate narrow‐band selective (96.7% accuracy) spectrum detector and performed a deep‐learning analysis of an artificial neural network (ANN). Furthermore, this GeS2 2‐D based spectral phototransistor, characterized by its high in‐plane anisotropy and electrically reconfigurable properties, extends the applicability of narrow‐band photodetection with 15 nm Full Width at Half Maximum (FWHM) to the recognition of trace‐gases at the parts per billion (ppb) level.

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Wavelength-Tunable Multispectral Photodetector With Both Ultraviolet and Near-Infrared Narrowband Detection Capability

Cited by 7 publications

References 34 publications

Si/Organic Integrated Narrowband Near‐Infrared Photodetector

Si/Organic Integrated Narrowband Near‐Infrared Photodetector

Bias‐Selectable Si Nanowires/PbS Nanocrystalline Film n–n Heterojunction for NIR/SWIR Dual‐Band Photodetection

Polarization‐Enhanced Narrow‐Band GeS₂ 2‐D SWIR Spectral Phototransistor

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Wavelength-Tunable Multispectral Photodetector With Both Ultraviolet and Near-Infrared Narrowband Detection Capability

Cited by 7 publications

References 34 publications

Si/Organic Integrated Narrowband Near‐Infrared Photodetector

Si/Organic Integrated Narrowband Near‐Infrared Photodetector

Bias‐Selectable Si Nanowires/PbS Nanocrystalline Film n–n Heterojunction for NIR/SWIR Dual‐Band Photodetection

Polarization‐Enhanced Narrow‐Band GeS2 2‐D SWIR Spectral Phototransistor

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Polarization‐Enhanced Narrow‐Band GeS₂ 2‐D SWIR Spectral Phototransistor