“…As critical parameters of a photodetector, the responsivity ( R ) and specific detectivity ( D *) can be calculated to be 620 mA/W and 1.37 × 10 12 cm Hz 1/2 W –1 (Jones), respectively, according to Formulae S2 and S3, as demonstrated in Figure d. Besides, the such performances are not only superior to those of PtSe 2 /Bi 2 Te 3 /planar Si (0.55 A/W, 6.74 × 10 11 @980 nm) and Bi 2 Te 3 /pyramidal Si (0.58 A/W, 8.91 × 10 11 @980 nm), as shown in Figure S8 and Table S2, but also better than the reported results, such as CuO/Si pyramids (0.28 A/W, 1.18 × 10 11 Jones@810 nm), MoS 2 /Al 2 O 3 /Si NWs (0.61 A/W, 1.48 × 10 12 Jones@808 nm), Bi 2 Te 3 nanoplates (55.06 mA/W, 5.92 × 10 7 Jones@850 nm), Te/Bi 2 Te 3 (12.07 mA/W, 5.87 × 10 10 Jones@365 nm), Bi 2 Te 3 /PbS (16 mA/W, 1.6 × 10 10 Jones@660 nm), Bi 2 Te 3 /Si (3.64 mA/W, 2 × 10 10 Jones@1064 nm), Ga 2 O 3 /Bi 2 Se 3 /p-Si (1.38 mA/W, 3.22 × 10 10 Jones@254 nm), and so on. In addition, the R of 0.25 mA/W and D * of 2.5 × 10 9 Jones are acquired at 1550 nm, as shown in Figure S9.…”