Grating Perovskite Enhanced Polarization-Sensitive GaAs-Based Photodetector

Wu, Chunyan; Zeng, Bin; Zhou, Kunnan; Shan, Longqiang; Wang, Junjie; Wang, Li; Yang, Yizhong; Zhou, Yubing; Luo, Lin‐Bao

doi:10.1109/ted.2022.3160943

Cited by 9 publications

(9 citation statements)

References 36 publications

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“…[26][27][28][29][30][31][32] On the other hand, the depletion region generated at the interface of the heterostructure, resulting in the suppression of dark current, which is beneficial for detecting weak CPL signals. [33][34][35][36] Therefore, it would be a great opportunity for chiral perovskitebased heterostructure to achieve highly sensitive CPL detection with a low detection limit. Considering all above merits, herein, we reported a heterostructure consist of chiral perovskites (R-MPA) 2 MAPb 2 I 7 and Si wafer.…”

Section: Introductionmentioning

confidence: 99%

Low Detection Limit Circularly Polarized Light Detection Realized by Constructing Chiral Perovskite/Si Heterostructures

Zhang

You

et al. 2023

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Chiral perovskites have been demonstrated as promising candidates for direct circularly polarized light (CPL) detection due to their intrinsic chirality and excellent charge transport ability. However, chiral perovskite‐based CPL detectors with both high distinguishability of left‐ and right‐handed optical signals and low detection limit remain unexplored. Here, a heterostructure, (R‐MPA)2MAPb2I7/Si (MPA = methylphenethylamine, MA = methylammonium) is constructed, to achieve high‐sensitive and low‐limit CPL detection. The heterostructures with high crystalline quality and sharp interface exhibit a strong built‐in electric field and a suppressed dark current, not only improving the separation and transport of the photogenerated carriers but also laying a foundation for weak CPL signals detection. Consequently, the heterostructure‐based CPL detector obtains a high anisotropy factor up to 0.34 with a remarkably low CPL detection limit of 890 nW cm−2 under the self‐driven mode. As a pioneering study, this work paves the way for designing high‐sensitive CPL detectors that simultaneously have great distinguishing capability and low detection limit of CPL.

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Section: Introductionmentioning

confidence: 99%

Low Detection Limit Circularly Polarized Light Detection Realized by Constructing Chiral Perovskite/Si Heterostructures

Zhang

You

et al. 2023

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“…In recent years, it has been found that micro‐ and nano‐scale structures can effectively solve the difficulties faced by the above technologies and greatly reduce the optical loss of optoelectronic devices. [ 13,15,19–22 ] For example, Li et al. achieved high‐performance UV PDs based on individual few‐layer Sr 2 Nb 3 O 10 sheets.…”

Section: Introductionmentioning

confidence: 99%

“…[17,18] In recent years, it has been found that micro-and nanoscale structures can effectively solve the difficulties faced by the above technologies and greatly reduce the optical loss of optoelectronic devices. [13,15,[19][20][21][22] For example, Li et al achieved highperformance UV PDs based on individual few-layer Sr 2 Nb 3 O 10 sheets. [22] Nanograting structure is a simple way to enhance the photoelectric conversion efficiency of PDs and other photoelectric conversion devices such as solar cells.…”

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confidence: 99%

In Situ Encapsulated Moiré Perovskite for Stable Photodetectors with Ultrahigh Polarization Sensitivity

Xia

et al. 2022

Advanced Materials

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Nanostructures provide a simple, effective, and low‐cost route to enhance the light‐trapping capability of optoelectronic devices. In recent years, nano‐optical structures have been widely used in perovskite optoelectronic devices to greatly enhance the device performance. However, the inherent instability of perovskite materials hinders the practical application of these nanostructured optoelectronic devices. Here, in situ encapsulated moiré lattice perovskite photodetectors (PDs) by two nanograting‐structured soft templates with relative rotation angles is fabricated. The confinement growth of the two nanograting templates leads to crystal growth with moiré lattice structure, which improves the light‐harvesting ability of the perovskite crystal, thereby improving the device performance. The PD exhibits responsivity to 1026.5 A W−1. The Moiré lattice‐perovskite‐based PD maintained 95% of the initial performance after 223 days. After being continuously sprayed with water moist for 180 min, the performance is maintained at 95.7% of its initial level. The nanograting structure endows the device with high polarization sensitivity of Imax/Imin as high as 9.1.

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“…Furthermore, the rise/fall times of our device are determined to be 1.5/5.5, 35/77, and 54/132 μs, respectively, under 980 nm, 1.55 μm, and 2.2 μm light illumination (Figure f). Additionally, the fast response speed is not only superior to that of the control devices of graphene/Si Schottky junction (42/112 μs) and PdTe 2 /Si Schottky junction without graphene top contact (8.5/38 μs) under 980 nm light illumination in Figure S9, but also surpassing perovskite or 2D material-based IR photodetectors. − In Figure g, photoresponse of the device to 980 nm pulsed light signal with different frequencies yields a large 3 dB bandwidth of ∼0.50 MHz ( f 3dB : photoresponse decreases to 0.707 of maximum value of device), which is 1–2 orders of magnitude larger than the values of control devices (PdTe 2 /Si ∼ 45 kHz, graphene/Si ∼ 5 kHz), and even higher than most of IR photodetectors based on 2D materials, ,,− perovskite, ,,, and 2D-3D vdW heterostructures, ,− as summarized in Figure h. Actually, the response speed can be further enhanced by improving the crystal quality of PdTe 2 and optimizing the device structure with reduction of the effective device area and thickness of the Si substrate.…”

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confidence: 99%

Uncooled Mid-Infrared Sensing Enabled by Chip-Integrated Low-Temperature-Grown 2D PdTe₂ Dirac Semimetal

Zeng,

Han,

Ren

et al. 2023

Nano Lett.

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Next-generation mid-infrared (MIR) imaging chips demand free-cooling capability and high-level integration. The rising two-dimensional (2D) semimetals with excellent infrared (IR) photoresponses are compliant with these requirements. However, challenges remain in scalable growth and substrate-dependence for on-chip integration. Here, we demonstrate the inch-level 2D palladium ditelluride (PdTe 2 ) Dirac semimetal using a low-temperature selfstitched epitaxy (SSE) approach. The low formation energy between two precursors facilitates low-temperature multiple-point nucleation (∼300 °C), growing up, and merging, resulting in self-stitching of PdTe 2 domains into a continuous film, which is highly compatible with back-end-of-line (BEOL) technology. The uncooled on-chip PdTe 2 /Si Schottky junction-based photodetector exhibits an ultrabroadband photoresponse of up to 10.6 μm with a large specific detectivity. Furthermore, the highly integrated device array demonstrates high-resolution room-temperature imaging capability, and the device can serve as an optical data receiver for IR optical communication. This study paves the way toward low-temperature growth of 2D semimetals for uncooled MIR sensing.

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Grating Perovskite Enhanced Polarization-Sensitive GaAs-Based Photodetector

Cited by 9 publications

References 36 publications

Low Detection Limit Circularly Polarized Light Detection Realized by Constructing Chiral Perovskite/Si Heterostructures

Low Detection Limit Circularly Polarized Light Detection Realized by Constructing Chiral Perovskite/Si Heterostructures

In Situ Encapsulated Moiré Perovskite for Stable Photodetectors with Ultrahigh Polarization Sensitivity

Uncooled Mid-Infrared Sensing Enabled by Chip-Integrated Low-Temperature-Grown 2D PdTe₂ Dirac Semimetal

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Grating Perovskite Enhanced Polarization-Sensitive GaAs-Based Photodetector

Cited by 9 publications

References 36 publications

Low Detection Limit Circularly Polarized Light Detection Realized by Constructing Chiral Perovskite/Si Heterostructures

Low Detection Limit Circularly Polarized Light Detection Realized by Constructing Chiral Perovskite/Si Heterostructures

In Situ Encapsulated Moiré Perovskite for Stable Photodetectors with Ultrahigh Polarization Sensitivity

Uncooled Mid-Infrared Sensing Enabled by Chip-Integrated Low-Temperature-Grown 2D PdTe2 Dirac Semimetal

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Uncooled Mid-Infrared Sensing Enabled by Chip-Integrated Low-Temperature-Grown 2D PdTe₂ Dirac Semimetal