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The advent of halide perovskite permitted significant progress in the field of III generation photovoltaics (PV), demonstrating a rapid growth of power conversion efficiency (PCE) up to 25.5% during the last decade. [1] This is mainly due to the peculiar properties of halide perovskites for photoelectric conversion: strong absorption in the visible region of the solar light spectrum, [2] defect tolerance, [3] big diffusion lengths of the charge carriers (>1 mm), [4] and tunability of the bandgap in the wide range (from 1.9 to 3.1 eV). [5] The improvement of perovskite solar cell (PSC) performance has been mainly driven by solution processing of the absorber films that allows simplifying the device fabrication at low temperature [6,7] by using various methods for the perovskite crystallization [8] and the control of morphology. [9] The cost-effective solution-based fabrication of the PSCs could be realized with various printing methods such as blade coating, [10,11] inkjet printing, [12] and slot-die, [13] which do not require the use of high vacuum and provide high throughput speed of production. Among the printing methods, the slot-die coating was considered as one of the most promising for upscale of the PSCs in sheetto-sheet and roll-to-roll fabrication. [13][14][15] This method of wet coating provides a high speed and large-area fabrication, [16] good film thickness control, highly uniform coating, and enables the effective ink consumption without materials loss during the deposition. [17,18] The upscaling of PSCs from lab-scale to large modules with an application of printing methods is a complex technological process that requires special fabrication conditions, including

NiO/perovskite interface with novel NiO precursor was investigated with Auger profiling for solar cell with PCE > 15%.

In this work, we show the route to obtain thermoplastic based composites with an enhanced thermal conductivity that was achieved by using exfoliated hexagonal boron nitride (hBN) particles as a filler material. Reports on composites with bulk or nano hBN showed, that while increasing the filler load improves thermal properties it could aggravate the composite melt rheology and mechanical properties. On the other hand, exfoliated hBN particles compared to bulk or nanopowder hBN could provide even better thermal properties with no degradation in composite mechanics, which was shown for epoxy. Taking into account the above, we obtained exfoliated hBN particles by ultrasound treatment in isopropyl alcohol and then used them as a filler in polypropylene based composites to increase the thermal conductivity. The composites with 29% wt. of exfoliated hBN showed a thermal conductivity of 0.721 W m−1 K−1 which is 4 times higher than for pristine polypropylene.

Interface engineering is one of the promising strategies for the long‐term stabilization of perovskite solar cells (PSCs), preventing chemical decomposition induced by external agents and promoting fast charge transfer. Recently, MXenes–2D structured transition metal carbides and nitrides with various functionalization (O, ‐F, ‐OH) have demonstrated high potential for mastering the work function in halide perovskite absorbers and have significantly improved the n‐type charge collection in solar cells. This work demonstrates that MXenes allow for efficient stabilization of PSCs besides improving their performances. A mixed composite bathocuproine:MXene, that is, (BCP:MXene) interlayer, is introduced at the interface between an electron‐transport layer (ETL) and a metal cathode in the p‐i‐n device structure. The investigation demonstrates that the use of BCP:MXene interlayer slightly increases the power conversation efficiency (PCE) for PSCs (from 16.5 for reference to 17.5%) but dramatically improves the out of Glove‐Box stability. Under ISOS‐L‐2 light soaking stress at 63 ± 1.5 °C, the T80 (time needed to reduce efficiency down to 80% of the initial one) period increases from 460 to > 2300 hours (h).

This article shows the new insights for stabilizing the p‐i‐n perovskite solar cells (PSCs) and modules based on double cation CsFAPbI3 absorber using CsCl additives. The presence of chlorine in the perovskite crystal structure results in the decrease of the lattice parameters by 0.6 ± 0.06%, in the increase of the bandgap value (+0.018 eV), and charge carrier lifetimes with respect to the undoped one. The champion PSCs based on the CsFAPbI3−xClx absorber show an increase in power conversation efficiency from 18.06% up to 20.13% after Cl doping. The light‐soaking stability of PSCs measured at maximum power point demonstrates impressive increase of the T80 from 1128 h for CsFAPbI3‐based devices to more than 3479 h for CsFAPbI3−xClx ones. It is found that the Cl doping suppresses the formation of lead iodide and pure CsPbI3 induced by decomposition and phase segregation processes only when the perovskite is covered with the C60/BCP electron‐transporting layer (ETL), while in the structure without ETL Cl additive is not effective. Finally, the high potential of Cl‐anion engineering for the perovskite modules (5 × 5 cm2) is demonstrated, which shows promising 17.08% of power conversation efficiency and light‐soaking stability for 1396 h.

Recent studies of lead halide perovskites demonstrate outstanding optoelectronic properties for thin-film semiconductor device application. Perovskite photovoltaic and light-emitting diodes are on the way to the mass production and spread in commercial semiconductor devices. The lab-to-fab transition of perovskite devices requires adaptation of perovskite deposition methods to industrial semiconductor fabrication standards. In this work, we demonstrated the formation of highly luminescence perovskite films by single-source chemical vapor deposition (ssCVD). Several stoichiometry compositions were prepared from inorganic precursors of CsBr and PbBr2 by dry mechanochemical synthesis with following evaporation. The combination of mechanochemical synthesis and ssCVD is an attractive approach due to the ability to scale up to industrial level and the precise control over the evaporation rate with a single source. Among all compositions CsBr:PbBr2, we show that CsPb2Br5 maintains phase composition and photoluminescent properties for powder and film. This work provides a comparative study of evaporated film properties (PL, XRD, TEM) and modeling calculations of interphase optical transitions.