The advent of halide perovskite permitted significant progress in the field of III generation photovoltaics (PV), demonstrating a rapid growth of power conversion efficiency (PCE) up to 25.5% during the last decade. [1] This is mainly due to the peculiar properties of halide perovskites for photoelectric conversion: strong absorption in the visible region of the solar light spectrum, [2] defect tolerance, [3] big diffusion lengths of the charge carriers (>1 mm), [4] and tunability of the bandgap in the wide range (from 1.9 to 3.1 eV). [5] The improvement of perovskite solar cell (PSC) performance has been mainly driven by solution processing of the absorber films that allows simplifying the device fabrication at low temperature [6,7] by using various methods for the perovskite crystallization [8] and the control of morphology. [9] The cost-effective solution-based fabrication of the PSCs could be realized with various printing methods such as blade coating, [10,11] inkjet printing, [12] and slot-die, [13] which do not require the use of high vacuum and provide high throughput speed of production. Among the printing methods, the slot-die coating was considered as one of the most promising for upscale of the PSCs in sheetto-sheet and roll-to-roll fabrication. [13][14][15] This method of wet coating provides a high speed and large-area fabrication, [16] good film thickness control, highly uniform coating, and enables the effective ink consumption without materials loss during the deposition. [17,18] The upscaling of PSCs from lab-scale to large modules with an application of printing methods is a complex technological process that requires special fabrication conditions, including
This work presents a study of trap levels in a mesoscopic multication lead halide perovskite solar cell structure. The investigation is performed by combining capacitance measurements, admittance measurements, Deep Level Transient Spectroscopy (DLTS), and Optical DLTS. We found a donor level with an energy of 0.2 eV below the conduction band of perovskite. The donor density reaches a concentration of 1018 cm−3 in the accumulation region present at the interface between the perovskite and transporting layers. Other two deep trap levels are found with energies of 0.57 eV and 0.74 eV. The first level is related to a hole trap while the second one to an electron trap.
Interface engineering is one of the promising strategies for the long‐term stabilization of perovskite solar cells (PSCs), preventing chemical decomposition induced by external agents and promoting fast charge transfer. Recently, MXenes–2D structured transition metal carbides and nitrides with various functionalization (O, ‐F, ‐OH) have demonstrated high potential for mastering the work function in halide perovskite absorbers and have significantly improved the n‐type charge collection in solar cells. This work demonstrates that MXenes allow for efficient stabilization of PSCs besides improving their performances. A mixed composite bathocuproine:MXene, that is, (BCP:MXene) interlayer, is introduced at the interface between an electron‐transport layer (ETL) and a metal cathode in the p‐i‐n device structure. The investigation demonstrates that the use of BCP:MXene interlayer slightly increases the power conversation efficiency (PCE) for PSCs (from 16.5 for reference to 17.5%) but dramatically improves the out of Glove‐Box stability. Under ISOS‐L‐2 light soaking stress at 63 ± 1.5 °C, the T80 (time needed to reduce efficiency down to 80% of the initial one) period increases from 460 to > 2300 hours (h).
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