The electrical characteristics of polycrystalline silicon layers are closely related to their grain structure. This paper describes a comprehensive study of the grain growth of polysilicon under a wide range of doping and processing conditions. A grain‐growth model has been developed and implemented in the SUPREM process simulator, and the simulated results are compared to those obtained by transmission electron microscopy for As‐, P‐ and B‐doped polysilicon. These results indicate that n‐type dopants increase the growth rate whereas the p‐type dopant has a negligible effect.
The use of computer aids for process modeling has grown rapidly over the past five years. Currently, industrial organizations are simulating thousands of process steps each month, both to cut development costs and to create more reproducible results. This paper will review recent progress in the field of process modeling and show typical applications. Both the design and process control aspects of modeling will be discussed.
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