Computer-Aided Process Modeling for Design and Process Control

Dutton, R.W.; Fahey, P.; Doganis, K.; Mei, Len; Hg, Lee

doi:10.1520/stp36181s

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1983

2013

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Cited by 4 publications

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“…Turning to the depletion load we can observe critical mask and process sensitivities for this narrow-width device [35]. Fig.…”

mentioning

confidence: 94%

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Modeling of the Silicon Integrated-Circuit Design and Manufacturing Process

Dutton¹

1983

SIAM J. Sci. and Stat. Comput.

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The evolution of process modeling is traced starting with bipolar technology in the 1960's through recent processing concerns for oxide-isolated MOS devices. The kinetics of diffusion and oxidation are used to illustrate both physical and numerical effects. The interaction of device effects with process modeling is discussed as well as the statistical implications of process variables. The nature of computer-aided design tools for process and device modeling are discussed. This includes tools that bridge gaps between technology and system design with potential application for manufacturing.

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“…Turning to the depletion load we can observe critical mask and process sensitivities for this narrow-width device [35]. Fig.…”

mentioning

confidence: 94%

“…A number of features of the device are apparent from the Fig. 35. First, the base-collector junction depth Xsc is different for the two regions.…”

mentioning

confidence: 99%