Process modeling for doped regions formation on high efficiency crystalline silicon solar cells

Florakis, A.; Janssens, Tom; Poortmans, Jef; Vandervorst, Wilfried

doi:10.1007/s10825-013-0487-2

Cited by 6 publications

(5 citation statements)

References 28 publications

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“…In the last years the simulation approach moved from 1D to 2D or 3D simulations, both for more accuracy and for particular architecture analysis, along with the increasing computational power available. The possibility to change every fabrication parameter in a wide range of values and to simulate numerically the actual performance is a strong enhancement in the design process [6,7].…”

Section: Introductionmentioning

confidence: 99%

Numerical simulation of the impact of design parameters on the performance of back-contact back-junction solar cell

et al. 2015

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This work presents a study based on electro-optical numerical simulations of the impact of geometrical and doping parameters on main figures of merit of crystalline silicon back-contact back-junction solar cells. State-of-the-art physical models in combination with two-dimensional simulations performed by a TCAD tool have been adopted to carry out an extensive and detailed analysis of the influence of many fabrication parameters on performance. The studied design parameters are the doping level in front surface field (FSF), back surface field (BSF) and emitter, and the main geometrical parameters. A doping level value that allows the maximization of the efficiency for the three regions can be clearly identified. In particular, for BSF and emitter, an efficiency degradation is observed for relatively lower doping values and is ascribed to the higher contact recombination while for higher doping values the Auger recombination plays a significant role in reducing the ultimate efficiency. In FSF region the recombination due to defects at the front interface is the main limiting mechanisms for efficiency. On the basis of our analysis, a marked sensitivity of the efficiency to the gap and pitch size is caused by the series resistance increase. The efficiency exhibits a maximum value for an emitter coverage fraction (R) of 85 %. However, in the case of lower emitter coverage, Auger, Shockley–Read–Hall (SRH): in bulk and at interfaces are detrimental for the cell conversion efficiency

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Section: Introductionmentioning

confidence: 99%

Numerical simulation of the impact of design parameters on the performance of back-contact back-junction solar cell

et al. 2015

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“…With this, we can keep the simple notation of (12) and do not have to account for the material-dependent terms. In equilibrium, (12) yields…”

Section: Interface Segregation Of Phosphorusmentioning

confidence: 99%

“…Complementary studies of P diffusion from glasses or spray-on sources [8]- [10] provide valuable information but are also not conclusive for postimplantation conditions due to the very different state of intrinsic defects at the onset of the annealing process. For the latter situation, only a few simulation studies have been published [11], [12].…”

mentioning

confidence: 99%

Diffusion and Segregation Model for the Annealing of Silicon Solar Cells Implanted With Phosphorus

Wolf

Martinez-Limia

Grote³

et al. 2015

IEEE J. Photovoltaics

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We present a fully calibrated model for the diffusion, segregation, and activation of phosphorus for typical annealing conditions of implanted silicon solar cells. In contrast to existing process simulation software, this model allows the quantitative prediction of doping profile distributions, and, thereby, sheet resistances, surface concentrations, and junction depths. The model also provides an intuitive understanding of the dependence of these quantities on the parameters of the annealing process.

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“…Different approaches have been proposed to improve the passivation/field effect compromise, for instance, improving cleaning [13], tuning the (i) a-Si:H layers structures and properties [17,18] or band management modifications using silicon based amorphous alloys [19][20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Homo-heterojunction concept: From simulations to high efficiency solar cell demonstration

Carrere

Lachaume

Thai

et al. 2018

Solar Energy Materials and Solar Cells

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A B S T R A C TThe novel solar cell architecture called silicon homo-heterojunction (HHJ) cell is investigated combining experimental and simulation approaches. This structure intends to overcome the limitations of the silicon heterojunction technology regarding the amorphous/ crystalline silicon interface (p) a-Si:H/(i) a-Si:H /(n) c-Si) by the addition of a (p + ) c-Si layer at the hetero-interface. First, the added (p + ) c-Si layer is experimentally investigated using boron implantation through the realization and characterization of symmetric solar cell precursors. An adapted process flow taking into account the (p + ) c-Si profile optimization, the annealing effects on substrate degradation, and the impact on surface passivation, is deeply explored. Then, large area solar cells are processed and the solar cell performance are discussed in view of the data obtained on precursors and with the help of realistic numerical simulations. Overall, we observe that the HHJ solar cells exhibit a small performance improvement compared to reference heterojunction cells. In particular, a gain in the fill factor is observed, which is shown to be originated from both an improvement in field effect and a decrease of the vertical series resistance from the a-Si:H layers. The experimental data obtained on the processed homo-heterojunction solar cells confirm that this technology can lead to improved conversion efficiencies compared to the high quality reference heterojunction solar cells.

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Process modeling for doped regions formation on high efficiency crystalline silicon solar cells

Cited by 6 publications

References 28 publications

Numerical simulation of the impact of design parameters on the performance of back-contact back-junction solar cell

Numerical simulation of the impact of design parameters on the performance of back-contact back-junction solar cell

Diffusion and Segregation Model for the Annealing of Silicon Solar Cells Implanted With Phosphorus

Homo-heterojunction concept: From simulations to high efficiency solar cell demonstration

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