Graphene and related 2D materials offer an ideal platform for next generation disruptive technologies and in particular the potential to produce printed electronic devices with low cost and high throughput....

A simple and fast “top‐down” protocol is introduced herein to prepare solution processable few‐layer phosphorene nanosheets using vortex fluidic mediated exfoliation under near‐infrared (NIR) pulsed laser irradiation. This novel shear‐exfoliation method requires short processing times and produces highly crystalline, atomically thin phosphorene nanosheets (4.3 ± 0.4 nm). The as‐prepared phosphorene nanosheets are used as an effective electron transporting material (ETM) for low‐temperature processed, planar n‐i‐p perovskite solar cells (PSCs). With the addition of phosphorene, the average power conversion efficiency (PCE) increases from 14.32% to 16.53% with a maximum PCE of 17.85% observed for the phosphorene incorporated PSCs which is comparable to the devices made using the traditional high‐temperature protocol. Experimental and theoretical (density‐functional theory) investigations reveal the PCE improvements are due to the high carrier mobility and suitable band energy alignment of the phosphorene. The work not only paves the way for novel synthesis of 2D materials, but also opens a new avenue in using phosphorene as an efficient ETM in photovoltaic devices.

Graphene oxide (GO) sheets have been used as the surfactant to disperse single walled carbon nanotubes (CNT) in water to prepare GO/CNT electrodes which are applied on silicon to form a heterojunction which can be used in solar cells. GO/CNT films with different ratios of the two components and with various thicknesses have been used as semitransparent electrodes and the influence of both factors on solar cell performance has been studied. The degradation rate of the GO/CNT-silicon devices in ambient conditions has also been explored. The influence of the film thickness on device performance is found to be related to the interplay of two competing factors, namely the sheet resistance and transmittance. CNTs help to improve the conductivity of the GO/CNT film while GO is able to protect the silicon from oxidation in the atmosphere.

In the quantum world, a single particle can have various degrees of freedom to encode quantum information. Controlling multiple degrees of freedom simultaneously is necessary to describe a particle fully and, therefore, to use it more efficiently. Here we introduce the transverse waveguide-mode degree of freedom to quantum photonic integrated circuits, and demonstrate the coherent conversion of a photonic quantum state between path, polarization and transverse waveguide-mode degrees of freedom on a single chip. The preservation of quantum coherence in these conversion processes is proven by single-photon and two-photon quantum interference using a fibre beam splitter or on-chip beam splitters. These results provide us with the ability to control and convert multiple degrees of freedom of photons for quantum photonic integrated circuit-based quantum information process.

Suspensions of single-walled, double-walled and multi-walled carbon nanotubes (CNTs) were generated in the same solvent at similar concentrations. Films were fabricated from these suspensions and used in carbon nanotube/silicon heterojunction solar cells and their properties were compared with reference to the number of walls in the nanotube samples. It was found that single-walled nanotubes generally produced more favorable results; however, the double and multi-walled nanotube films used in this study yielded cells with higher open circuit voltages. It was also determined that post fabrication treatments applied to the nanotube films have a lesser effect on multi-walled nanotubes than on the other two types.

In the quantum world, a single particle can have various degrees of freedom to encode quantum information. Controlling multiple degrees of freedom simultaneously is necessary to describe a particle fully and, therefore, to use it more efficiently. Here we introduce the transverse waveguide-mode degree of freedom to quantum photonic integrated circuits, and demonstrate the coherent conversion of a photonic quantum state between path, polarization and transverse waveguide-mode degrees of freedom on a single chip. The preservation of quantum coherence in these conversion processes is proven by single-photon and two-photon quantum interference using a fibre beam splitter or on-chip beam splitters. These results provide us with the ability to control and convert multiple degrees of freedom of photons for quantum photonic integrated circuit-based quantum information process.

Incorporation of as prepared single-walled carbon nanotubes (SWCNTs) into the electron transporting layer (ETL) is an effective strategy to enhance the photovoltaic performance of perovskite solar cells (PSCs). However, the fundamental role of the SWCNT electrical types in the PSCs is not well understood. Herein, we prepared semiconducting (s-) and metallic (m-) SWCNT families and integrated them into TiO 2 photoelectrodes of the PSCs. Based on experimental and theoretical studies, we found that the electrical type of the nanotubes plays an important role in the devices. In particular, the mixture of s-SWCNTs and m-SWCNTs (2:1 w/w)-based PSCs exhibited a remarkable efficiency of up to 19.35%, which was significantly higher than that of the best control cell (17.04%). In this class of PSCs, semiconducting properties of s-SWCNTs play a critical role in extracting and transporting electrons, whereas m-SWCNTs provide high conductance throughout the electrode.

Carbon nanotube-silicon (CNT-Si)-based heterojunction solar cells (HJSCs)are a promising photovoltaic (PV) system. Herein, few-layer black phosphorus (FL-BP) sheets are produced in N-methyl-2-pyrrolidone (NMP) using microwave-assisted liquid-phase exfoliation and introduced into the CNTs-Sibased HJSCs for the first time. The NMP-based FL-BP sheets remain stable after mixing with aqueous CNT dispersion for device fabrication. Due to their unique 2D structure and p-type dominated conduction, the FL-BP/NMP incorporated CNT-Si devices show an impressive improvement in the power conversion efficiency from 7.52% (control CNT-Si cell) to 9.37%. Our densityfunctional theory calculation reveals that lowest unoccupied molecular orbital (LUMO) of FL-BP is higher in energy than that of single-walled CNT. Therefore, we observed a reduction in the orbitals localized on FL-BP upon highest occupied molecular orbital to LUMO transition, which corresponds to an improved charge transport. This study opens a new avenue in utilizing 2D phosphorene nanosheets for next-generation PVs.