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We have investigated the effect of selenium additions on the kinetics of the degree and rate of hexagonal to cubic BN conversion (hBN 4 cBN) as well as on the linear rate of the cBN crystal growth in the BN-LiH(N, Se) system. Experiments were performed in the temperature range 1940 to 2080 K at a pressure of 4.3 GPa. For 0.5, 1.0, and 3.0 mass% selenium addition, the activation energy of the process of cBN formation is found to be 45.0, 39.0, and 34.0 kJ/mol, respectively. The resulting crystals showed n-type conduction with a resistivity of lo5 to lo8 Q cm and a dislocation density of lo5 to lo3 cm-2.

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