Luminescence properties of graphite-like boron nitride

Lukomskii, A. I.; Shipilo, V. B.; Gameza, L. M.

doi:10.1007/bf00667655

Cited by 17 publications

(18 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Luminescence properties of high purity commercially available hBN microcrystal powders have been largely studied in cathodoluminescence [2][3][4][5] and photoluminescence [6][7][8][9][10][11][12][13][14] experiments. Due to the synthesis methods used, these powders are inherently contaminated by carbon, calcium and oxygen impurities.…”

Section: Therefore It Is Of Interest To Analyze and Compare Luminescmentioning

confidence: 99%

Photoluminescence properties of pyrolytic boron nitride

Museur

Kanaev

2009

J Mater Sci

View full text Add to dashboard Cite

Abstract.We report on spectroscopic study of pyrolytic hBN (pBN) by means of time-and energyresolved photoluminescence methods. A high purity of pBN samples (though low crystallinity) allows complementary information about excited states involved into the luminescence process. We affirm our recent conclusions about the impurity-related nature of most of the fluorescence bands in microcrystalline hBN. In addition, a broad band centred at 3.7 eV previously not considered because of its superposition with an intense structured impurity emission is attributed to the radiative recombination of deep DAPs.3

show abstract

Section: Therefore It Is Of Interest To Analyze and Compare Luminescmentioning

confidence: 99%

Photoluminescence properties of pyrolytic boron nitride

Museur

Kanaev

2009

J Mater Sci

View full text Add to dashboard Cite

show abstract

“…1͑a͒ and 1͑b͔͒ has been reported in the past by numerous groups either in 10,43,46,47 or photoluminescence experiments. 10,14,[39][40][41][42]44,45,47,48 Some authors have assigned it to intrinsic luminescence of hBN molecular layers 47 or to phonon-assisted band-edge luminescence.…”

Section: A Luminescence Of Polycrystalline Hbn Samplesmentioning

confidence: 99%

“…1 have been recently reported on photoluminescence and cathodoluminescence experiments of commercial hBN powder. 10,[39][40][41][42][43][44][45][46][47][48] However, in these publications, no distinctions were made between the broad band and structured emissions. We now assign the structured UV emission to impurities ͑probably C͒ and the broadband emission to deep DAP of strongly localized center.…”

Section: A Luminescence Around 4 Ev In Hbn Powder Samplesmentioning

confidence: 99%

Defect-related photoluminescence of hexagonal boron nitride

Museur

Feldbach²,

Kanaev³

2008

Phys. Rev. B

228

227

View full text Add to dashboard Cite

Photoluminescence of polycrystalline hexagonal boron nitride ͑hBN͒ was measured by means of time-and energy-resolved spectroscopy methods. The observed bands are related to donor-acceptor pair transitions, impurities, and structural defects. The excitation of samples by high-energy photons above 5.4 eV enables a phenomenon of photostimulated luminescence ͑PSL͒, which is due to distantly trapped conduction band electrons and valence band holes. These trapped charges are metastable and their re-excitation with low-energy photons results in anti-Stokes photoluminescence. The comparison of photoluminescence excitation spectra and PSL excitation spectra allows band analysis that supports the hypothesis of Frenkel-type exciton in hBN with a large binding energy.

show abstract

“…Analysis of the cathodoluminescence spectrum of the HBN center demonstrated its structural analogy to the cathodoluminescence of the C center recorded in hBN single crystals, formed during growth of cBN single crystals [18]. In that paper, two structurally analogous C and C ′ spectra were recorded, with main lines at 4.139 eV and 4.095 eV, and the positive effect of carbon impurity on formation of such lines was noted.…”

mentioning

confidence: 97%

“…Note that the 5-fold degeneracy of the d orbitals of the transition metal ion is removed in the crystal field of the ligands surrounding Fig. 2 Photoluminescence spectra for a GB-1 center, recorded from a cBN single crystal in 1 µm steps along a line crossing its surface (a) and the same spectra aligned in the same plane (b); 1-5) individual bands; bands 2 and 4 are analogous to the O spectrum recorded in [18]. the ion, located in a particular crystal matrix, which in our case may be the reason for the appearance of fine structure for each of the bands.…”

mentioning

confidence: 99%

Luminescence centers in cubic boron nitride

Shishonok

2007

J Appl Spectrosc

View full text Add to dashboard Cite

Complex and multiband photoluminescence spectra for GB and HBN centers in single crystals of cubic boron nitride (cBN) were recorded in the wavelength ranges 385-400 nm and 365-395 nm and the nature of these centers was studied. The use of models involving resonance vibrations and strongly shifted configuration diagrams for the electronic ground state and excited state made it possible to associate formation of the GB-1 center with the presence of tungsten impurity in cBN. It was established that the HBN band in the 300-350 nm range of the cathodoluminescence spectra of cBN polycrystals, single crystals, and micropowders is associated with luminescence centers present in microinclusions of graphite-like boron nitride (hBN). The nature of the hBN band is tentatively interpreted within the model of recombination of donor and acceptor defects in hBN: respectively nitrogen vacancies and carbon atoms in positions substituting for nitrogen.Key words: cubic boron nitride, photoluminescence, cathodoluminescence, nature of optically active defects, luminescence center, spectrum with complex structure, resonance vibrations, configuration diagram.Introduction. Cubic boron nitride (cBN), as a wide-gap semiconductor, is a promising material for use in electronics and optoelectronics, detectors and devices suitable for operation under high radiation and temperature conditions and also in chemically aggressive media. Since the defect and impurity structure of cBN has not been well studied, it should be quite effective to analyze it by luminescence correlated with the macroscopic characteristics of the material, taking into account the indicated practical applications.From the standpoint of basic research on cBN, of course, direct analysis of the nature of the optical transitions at the luminescence centers in cBN is of interest, including comparison with its closest Group III-Group V analogs: diamond and gallium nitride.Thus in the luminescence spectra of gallium nitride, we observe a sufficient number of features of a type associated with donor-acceptor recombination or with recombination on free or bound excitons [1]. Of course, in the indicated cases, oppositely charged impurities or defects are present simultaneously in GaN which are introduced into the material by doping or are present in the material as intrinsic defects. Effective doping of diamond is difficult, and obtaining diamond with n-type conductivity is problematic. This is explained by the lack of luminescence centers of the above-indicated type in diamond [2] and formation of many defects in diamond such that electronic transitions in them are intracenter transitions.The number of luminescence centers in cBN that have been detected so far is small compared with diamond and GaN, and only isolated centers have been thoroughly studied. Based on the hypothetical nature of the optical transitions at these centers, the overall results of luminescent studies of cBN show considerable similarity to diamond. Thus in the luminescence spectra of cBN, the predominant bands...

show abstract

Luminescence properties of graphite-like boron nitride

Cited by 17 publications

References 5 publications

Photoluminescence properties of pyrolytic boron nitride

Photoluminescence properties of pyrolytic boron nitride

Defect-related photoluminescence of hexagonal boron nitride

Luminescence centers in cubic boron nitride

Contact Info

Product

Resources

About