Photoluminescence properties of pyrolytic boron nitride

Museur, L.; Kanaev, Andreï

doi:10.1007/s10853-009-3334-x

Cited by 24 publications

(25 citation statements)

References 36 publications

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“…32,35 According to the previous studies, the increase of planar faults in hBN can reduce the DUV luminescence efficiency and give rise to a decreased DUV to $300 nm emission ratio. 32,36 However, our results in Figure 3 are on the contrary that the DUV to $300 nm emission ratio increased with ball milling time. So the relative decrease of the $300 nm band is contributed by another factor, which is discussed below.…”

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confidence: 72%

Photoluminescence of boron nitride nanosheets exfoliated by ball milling

Chen

Cheng

et al. 2012

Applied Physics Letters

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Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition J. Appl. Phys. 112, 063526 (2012) Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots Appl. Phys. Lett. 101, 131101 (2012) Optical properties of InGaPN epilayer with low nitrogen content grown by molecular beam epitaxy J. Appl. Phys. 112, 063507 (2012) Polarized and diameter-dependent Raman scattering from individual aluminum nitride nanowires: The antenna and cavity effects Appl. Phys. Lett. 101, 121902 (2012) Structural and micromechanical analyses by polarized Raman spectroscopy of wurtzitic GaN films grown on (0001) sapphire substrates

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confidence: 72%

Photoluminescence of boron nitride nanosheets exfoliated by ball milling

Chen

Cheng

et al. 2012

Applied Physics Letters

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“…[ 7,9–15 ] Museur et al reported three photoluminescence (PL) bands at the energies of 5.3, 3.75, and 3.1 eV for pyrolytic hBN (pBN) samples. [ 9 ] pBN samples are high‐purity samples, free of carbon and oxygen. The emission bands at around 5.3 and 3.57 eV were found to be donor−acceptor pair (DAP)‐type transitions.…”

Section: Introductionmentioning

confidence: 99%

Identification of the Nitrogen Interstitial as Origin of the 3.1 eV Photoluminescence Band in Hexagonal Boron Nitride

Khorasani

Frauenheim

Aradi

et al. 2021

Physica Status Solidi (b)

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Nitrogen interstitials (normalNnormali) have the lowest formation energy among intrinsic defects of hexagonal boron nitride (hBN) under n‐type and N‐rich conditions. Using an optimized hybrid functional, which reproduces the gap and satisfies the generalized Koopman's condition, an normalNnormali configuration is found, which is lower in energy than the ones reported so far. The (0/–) charge transition level is also much deeper, so normalNnormali acts as a very efficient compensating center in n‐type samples. Its calculated photoluminescence (PL) at 3.0 eV agrees well with the position of an N‐sensitive band measured at 3.1 eV. It is also found that the nitrogen vacancy (normalVnormalN) cannot be the origin of the three‐boron‐center (TBC) electron paramagnetic resonance (EPR) center and in thermal equilibrium it is even unlikely to exist in n‐type samples.

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“…Since then, several photo-and cathodoluminescence studies [3][4][5]7,8,[32][33][34] have been published in an effort to understand the electronic and optical properties of h-BN. According to these reports, exciton formation, impurities and defects are responsible for h-BN luminescence, due to the formation of acceptor and donor levels in the bandgap.…”

Section: Introductionmentioning

confidence: 99%

Point defects in hexagonal BN, BC3 and BCxN compounds studied by x-ray absorption near-edge structure

Caretti

Jiménez

2011

Journal of Applied Physics

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The generation of point defects in highly oriented pyrolytic boron nitride (HOPBN) after Ar þ ion bombardment in ultrahigh vacuum and subsequent exposure to air was studied by angle-resolved x-ray absorption near edge structure (XANES). The pristine HOPBN showed well-oriented boron nitride (BN) basal planes parallel to the surface, with a negligible amount of defects. Amorphization of the BN structure took place after Ar þ sputtering, as indicated by the broadening of the XANES spectra and significant decrease of the characteristic p* states. Following air exposure, the XANES analysis revealed a spontaneous reorganization of the sample structure. The appearance of four new B1s p* excitonic peaks indicates an oxygen decoration process of the nitrogen vacancies created by ion bombardment. A core-level shift model is presented to support this statement. This model is successfully extended to the case of oxygen substitutional defects in hexagonal BC 3 and BC x N (0 < x < 4) materials, which can be applied to any B-based sp 2 -bonded honeycomb structure.

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Photoluminescence properties of pyrolytic boron nitride

Cited by 24 publications

References 36 publications

Photoluminescence of boron nitride nanosheets exfoliated by ball milling

Photoluminescence of boron nitride nanosheets exfoliated by ball milling

Identification of the Nitrogen Interstitial as Origin of the 3.1 eV Photoluminescence Band in Hexagonal Boron Nitride

Point defects in hexagonal BN, BC3 and BCxN compounds studied by x-ray absorption near-edge structure

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