Luminescent properties of sphalerite boron nitride doped with silicon and carbon

Shipilo, V. B.; Lukomskii, A. I.; Gameza, L. M.

doi:10.1007/bf00662847

Cited by 5 publications

(7 citation statements)

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“…2a, aligned in the same vertical plane. Note that one of the photoluminescence spectra of the center (spectrum O), consisting of two lines (at 3.180 eV and 3.235 eV), is identical to the cathodoluminescence spectrum of the O center (3.184 eV) recorded in cBN single crystals in [15]. We cannot rule out the possibility that it is part of the GB-1 multiplet.…”

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confidence: 91%

Luminescence centers in cubic boron nitride

Shishonok

2007

J Appl Spectrosc

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Complex and multiband photoluminescence spectra for GB and HBN centers in single crystals of cubic boron nitride (cBN) were recorded in the wavelength ranges 385-400 nm and 365-395 nm and the nature of these centers was studied. The use of models involving resonance vibrations and strongly shifted configuration diagrams for the electronic ground state and excited state made it possible to associate formation of the GB-1 center with the presence of tungsten impurity in cBN. It was established that the HBN band in the 300-350 nm range of the cathodoluminescence spectra of cBN polycrystals, single crystals, and micropowders is associated with luminescence centers present in microinclusions of graphite-like boron nitride (hBN). The nature of the hBN band is tentatively interpreted within the model of recombination of donor and acceptor defects in hBN: respectively nitrogen vacancies and carbon atoms in positions substituting for nitrogen.Key words: cubic boron nitride, photoluminescence, cathodoluminescence, nature of optically active defects, luminescence center, spectrum with complex structure, resonance vibrations, configuration diagram.Introduction. Cubic boron nitride (cBN), as a wide-gap semiconductor, is a promising material for use in electronics and optoelectronics, detectors and devices suitable for operation under high radiation and temperature conditions and also in chemically aggressive media. Since the defect and impurity structure of cBN has not been well studied, it should be quite effective to analyze it by luminescence correlated with the macroscopic characteristics of the material, taking into account the indicated practical applications.From the standpoint of basic research on cBN, of course, direct analysis of the nature of the optical transitions at the luminescence centers in cBN is of interest, including comparison with its closest Group III-Group V analogs: diamond and gallium nitride.Thus in the luminescence spectra of gallium nitride, we observe a sufficient number of features of a type associated with donor-acceptor recombination or with recombination on free or bound excitons [1]. Of course, in the indicated cases, oppositely charged impurities or defects are present simultaneously in GaN which are introduced into the material by doping or are present in the material as intrinsic defects. Effective doping of diamond is difficult, and obtaining diamond with n-type conductivity is problematic. This is explained by the lack of luminescence centers of the above-indicated type in diamond [2] and formation of many defects in diamond such that electronic transitions in them are intracenter transitions.The number of luminescence centers in cBN that have been detected so far is small compared with diamond and GaN, and only isolated centers have been thoroughly studied. Based on the hypothetical nature of the optical transitions at these centers, the overall results of luminescent studies of cBN show considerable similarity to diamond. Thus in the luminescence spectra of cBN, the predominant bands...

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confidence: 91%

Luminescence centers in cubic boron nitride

Shishonok

2007

J Appl Spectrosc

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“…• In the presence of carbon or silicon doping two centers appear at the energies M-1=1.65 eV and M-2=1.636 eV. 82 The intensity of these centers increases when the growth occurs in a nitrogen-excess atmosphere which might promote the formation of boron vacancies. Therefore, the M-1 center has been ascribed to C or Si substitutionals at B sites (C B ) while the M-2 center to Si substitutionals at B sites (Si B ).…”

Section: A Literature Surveymentioning

confidence: 99%

“…When the growth occurs in a boron excess, carbon or silicon doping leads to the appearence of the Γ center at 2.99 eV presenting a phonon side band at 33 meV. 82 • A series of emissions named Radiation Cubic (RC) has been observed by CL at the energies RC-1=2.27 eV, RC-2=2.15 eV, RC-3=1.99 eV and RC-4=1.86 eV on c-BN crystals bombarded with electrons having an energy in the order of the MeV or in the range 150-300 keV 29,31,83,84 or by ion irradiation. 93 More recent investigations reported the generation of these centers by femtosecond laser pulses.…”

Section: A Literature Surveymentioning

confidence: 99%

“…This series has been called GB-1 center but also O center. 82,90 Shipilo et al reported that these emissions are encountered in Si or carbon doped crystals only grown in an excess of nitrogen. 82 Shishonok et al proposed that this center might be associated with heavy atom impurities due to the low energy of the phonon replica which does not correspond to any typical vibration mode of c-BN.…”

Section: A Literature Surveymentioning

confidence: 99%

“…82,90 Shipilo et al reported that these emissions are encountered in Si or carbon doped crystals only grown in an excess of nitrogen. 82 Shishonok et al proposed that this center might be associated with heavy atom impurities due to the low energy of the phonon replica which does not correspond to any typical vibration mode of c-BN. 90 • A zero-phonon line at 4.93 eV followed by several phonon replica separated by 152 meV, originally indicated as T center, has been observed using cathodoluminescence 82,91 and synchrotron radiation stimulated luminescence.…”

Section: A Literature Surveymentioning

confidence: 99%

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Cubic BN optical gap and intragap optically active defects

Tararan,

di Sabatino,

Gatti

et al. 2018

Preprint

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We report a comprehensive study on the optical properties of cubic boron nitride (c-BN) and its optically active defects. Using electron energy-loss spectroscopy (EELS) within a monochromated scanning transmission electron microscope (STEM) on the highest-quality crystals available, we demonstrate unequivocally that the optical-gap energy of c-BN slightly exceeds 10 eV. Further theoretical analysis in the framework of the Bethe-Salpeter equation of many-body perturbation theory supports this result. The spatial localization of defect-related emissions has been investigated using nanometric resolved cathodoluminescence (nano-CL) in a STEM. By high-temperature annealing a c-BN powder, we have promoted phase transitions in nanometric domains which have been detected by the appearance of specific hexagonal-phase signatures in both EELS and CL spectra. A high number of intragap optically active centers are known in c-BN, but the literature is rather scattered and hence has been summarized here. For several emission lines we have obtained nano-CL maps which show emission spot sizes as small as few tens of nanometers. Finally, by coupling nano-CL to a Hanbury-Brown-Twiss intensity interferometer, we have addressed individual spots in order to identify the possible presence of single-photon sources. The observed CL bunching effect is compatible with a limited set of single-photon emitters and it permits obtaining emission lifetimes of the order of the nanosecond.

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Near-threshold creation of optical centres in electron irradiated cubic boron nitride

Shishonok

Steeds

2002

Diamond and Related Materials

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Luminescent properties of sphalerite boron nitride doped with silicon and carbon

Cited by 5 publications

References 3 publications

Luminescence centers in cubic boron nitride

Luminescence centers in cubic boron nitride

Cubic BN optical gap and intragap optically active defects

Near-threshold creation of optical centres in electron irradiated cubic boron nitride

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