Activation and deactivation in heavily boron-doped silicon using ultra-low-energy ion implantation Redistribution and electrical activation of ultralow energy implanted boron in silicon following laser annealing This article demonstrates the capabilities of a new noncontact optical technique for measuring active doping depth of shallow implants. Employing a 2 m spot size, it provides a fast, nondestructive measurement in dimensions approaching those of individual devices. The method can be used to map micron-and wafer-scale regions, and does not require an edge exclusion zone. Data are presented showing performance on layers varying in depth from 200 to 1200 Å using rapid thermal annealing activated low-energy B 11 implants. Center-to-edge diameter scans on 200 mm wafers are presented. In many cases these show edge effects in the outermost centimeter, indicating the importance of minimizing the edge exclusion zone. Measurements are validated through correlation to spreading resistance profiles, and show a depth resolution of better than 3 Å.
In response to demand for higher volumes and greater product capability, integrated optoelectronic device processing is rapidly increasing in complexity, benefiting from techniques developed for conventional silicon integrated circuit processing. The needs for high product yield and low manufacturing cost are also similar to the silicon wafer processing industry. This paper discusses the design and use of an automated inspection instrument called the Optical Surface Analyzer (OSA) to evaluate two critical production issues in optoelectronic device manufacturing: (1) film thickness uniformity, and (2) defectivity at various process steps. The OSA measurement instrument is better suited to photonics process development than most equipment developed for conventional silicon wafer processing in two important ways: it can handle both transparent and opaque substrates (unlike most inspection and metrology tools), and it is a full-wafer inspection method that captures defects and film variations over the entire substrate surface (unlike most film thickness measurement tools). Measurement examples will be provided in the paper for a variety of films and substrates used for optoelectronics manufacturing.
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