Carrier Illumination Characterization of Ultra-Shallow Implants

Borden, P.; Bechtler, L.; Lingel, K.; Nijmeijer, R.

doi:10.1201/9780203904541.ch5

Cited by 6 publications

(3 citation statements)

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“…The pumpinduced modulated optical reflectance is then measured by a second laser, the probe laser. In order to obtain more information on the sample, an external parameter ͑the pump laser modulation frequency, 3 the separation between the two lasers, 4,5 the pump laser irradiance, [6][7][8] etc.͒ can be varied. Carrier Illumination™ ͑CI͒ ͑Ref.…”

Section: Introductionmentioning

confidence: 99%

Impact of band gap narrowing and surface recombination on photoelectrothermal modulated optical reflectance power curves

Dortu

Bogdanowicz

Clarysse

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Photomodulated optical reflectance is a well established technique for surface and near surface characterizations. In this work, the nonlinear behavior of the differential reflectance as a function of the pump irradiance (104–106W∕cm2) is studied on uniformly and nonuniformly (p-n∕p+-p junctions) doped silicon structures, with a particular emphasis on the impact of band gap narrowing (BGN) and of surface recombination velocities (SRVs). We show that the BGN induced by the presence of excess carriers substantially influences the excess carrier profile. We also explain the unexpected shape of power curves on lowly doped substrate by a time-dependent variation of the SRVs during illumination.

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Section: Introductionmentioning

confidence: 99%

Impact of band gap narrowing and surface recombination on photoelectrothermal modulated optical reflectance power curves

Dortu

Bogdanowicz

Clarysse

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…The total amount of light reflected back from the interface might be small, but it has a mayor impact on the intensity of the PMR signal. This makes it possible to gather information about the implanted layer [6].…”

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confidence: 99%

“…PMR devices can be used on pre-anneal ion-implanted samples to measure the implantation dose and energy [4,5], and also on post-anneal samples, to establish the depth of the p-n junction [3,6].…”

mentioning

confidence: 99%

Application of the photomodulated reflectance technique to the monitoring of metal layers

Dobos

Somogyi

Lenk

et al. 2011

Phys. Status Solidi C

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Photomodulated reflectance (PMR) measurement techniques are currently used for the monitoring of ultra‐shallow junctions. This paper discusses the possibility of applying them to the characterisation of metal layers. A finite element method based computer model has been created to study the dependence of the PMR signal on different sample parameters. We present the results of these simulations and show that the method can be used to establish the thickness of a metal layer (if the material is known) and it can also provide information about the metal/semiconductor interface. This information might be used to characterise the barrier seed layer beneath the metal, by a non‐contact and non‐destructive way. Simulation results are also supported by actual measurements on test samples. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Metrology technology for the 70-nm node: process control through amplification and averaging microscopic changes

Diebold¹

2002

IEEE Trans. Semicond. Manufact.

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Carrier Illumination Characterization of Ultra-Shallow Implants

Cited by 6 publications

References 0 publications

Impact of band gap narrowing and surface recombination on photoelectrothermal modulated optical reflectance power curves

Impact of band gap narrowing and surface recombination on photoelectrothermal modulated optical reflectance power curves

Application of the photomodulated reflectance technique to the monitoring of metal layers

Metrology technology for the 70-nm node: process control through amplification and averaging microscopic changes

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