We construct a kink solution on a non-BPS D-brane using Berkovits' formulation of superstring field theory in the level truncation scheme. The tension of the kink reproduces 95% of the expected BPS D-brane tension. We also find a lump-like solution which is interpreted as a kink-antikink pair, and investigate some of its properties. These results may be considered as successful tests of Berkovits' superstring field theory combined with the modified level truncation scheme.
In this study, we have investigated the performance two types of nonvolatile MOSFET devices in terms of the performance and reliability. Either SRO (Silicon Rich Oxide) or SRON (Silicon Rich OxyNitride) trap layer was used as a charge trap layer. The trap layers were deposited using ALD (Atomic Layer Deposition) method. The transistor with SRON trap layer combined with thinner tunneling oxide yields larger memory window but worse retention characteristics.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.