Study On Charge Trap Layers In Charge Trap Metal–Oxide–Semiconductor Field Effect Transistor

Abstract

We construct a kink solution on a non-BPS D-brane using Berkovits' formulation of superstring field theory in the level truncation scheme. The tension of the kink reproduces 95% of the expected BPS D-brane tension. We also find a lump-like solution which is interpreted as a kink-antikink pair, and investigate some of its properties. These results may be considered as successful tests of Berkovits' superstring field theory combined with the modified level truncation scheme.

Impact of P/E Stress on Trap Profiles in Bandgap-Engineered Tunneling Oxide of 3D NAND Flash Memory

“…There are two main electron traps in a nitrogen-doped oxide (N1): ≡ Si 2 N • and ≡ SiO • [23]. The former is a shallow trap with an energy level of less than 1.0 eV from EC_N1, and the energy level of the latter is typically in the range of 1.3 to 1.9 eV from EC_N1 [23][24][25]. The energy level of the peak trap density is similar to that of ≡ SiO • , as shown in Fig.…”

Carrier Transport Mechanisms of the Programming and Retention Characteristics for TaN–Al2O3–Si3N4–SiO2–Si Flash Memory Devices

“…[1][2][3][4][5][6][7] The charge trap flash (CTF) memory has emerged as excellent candidates for reducing scale-down problems. [8][9][10][11][12][13] The CTF memory devices utilizing a Si 3 N 4 layer, acting as a charge trap layer, allow a significant improvement in the cell immunity to the stress induced leakage current and the cellto-cell parasitic interference and to enhance the scaling technology perspectives in point of the reliability. [14][15][16][17][18] Because the programming speed of the TaN-Al 2 O 3 -Si 3 N 4 -SiO 2 -Si (TANOS) memory cells with a charge trapping layer increases due to the existence of the Al 2 O 3 layer with a high-k value and a TaN gate with a high work function, the CTF memory devices with a TANOS structure have become particularly interesting for potential applications in next-generation charge trap flash memory cells.…”