Carrier Transport Mechanisms of the Programming and Retention Characteristics for TaN–Al2O3–Si3N4–SiO2–Si Flash Memory Devices

Kim, Dong Hun; You, Joo Hyung; Lee, Dea Uk; Kim, Tae Whan; Lee, Keun Woo

doi:10.7567/jjap.51.06fe21

Cited by 2 publications

(2 citation statements)

References 27 publications

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“…[1][2][3][4][5] Si/SiO 2 / Si 3 N 4 /Al 2 O 3 /TaN is a typical structure used in charge trap flash memory and has been widely developed to replace the Si/SiO 2 /Si 3 N 4 /SiO 2 /poly-Si structure. [1][2][3][4][5] Si/SiO 2 / Si 3 N 4 /Al 2 O 3 /TaN is a typical structure used in charge trap flash memory and has been widely developed to replace the Si/SiO 2 /Si 3 N 4 /SiO 2 /poly-Si structure.…”

Section: Introductionmentioning

confidence: 99%

Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors

Nabatame

Ohi

Ito

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inConduction processes in metal-insulator-metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition J. Vac. Sci. Technol. A 32, 01A122 (2014); 10.1116/1.4843555 Al 2 O 3 / NbAlO / Al 2 O 3 sandwich gate dielectric film on InP Appl. Phys. Lett. 96, 022904 (2010); 10.1063/1.3292217 Thermally stable amorphous ( Al Mo Nb Si Ta Ti V Zr ) 50 N 50 nitride film as diffusion barrier in copper metallization Appl. Phys. Lett. 92, 052109 (2008); 10.1063/1.2841810Low temperature crystallization of high permittivity Ta oxide using an Nb oxide thin film for metal/insulator/metal capacitors in dynamic random access memory applications The authors studied the characteristics of Si/Al 2 O 3 /(Ta/Nb)O x /Al 2 O 3 /SiO 2 /Pt charge trap capacitors fabricated by atomic layer deposition and postmetallization annealing at 400 C. Al 2 O 3 and (Ta/Nb)O x films are amorphous and have negligible fixed charges. In program mode, a flatband voltage (V fb ) drastically shifts toward the positive direction at a short program time of 10 À4 s. A large V fb shift of approximately 4 V arises after programming at 1 mC/cm 2 because there is a large difference in the conduction band offset between the (Ta/Nb)O x -charge trapping layer (TNO-CTL) and the Al 2 O 3 -blocking layer (AlO-BL) (1.8 eV). In the retention mode, most of the trapped electrons in the TNO-CTL transfers across the Al 2 O 3 -tunneling layer (AlO-TL) rather than the AlO-BL. The thickness of the AlO-TL affects the V fb shift degradation behavior in the retention mode. The injected electrons are dominantly located at the TNO-CTL/ALO-BL interface, determined from the thickness dependence of the TNO-CTL on the V fb shift.

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Section: Introductionmentioning

confidence: 99%

Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors

Nabatame

Ohi

Ito

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…Similarly, the scaling down of the flash memory is one of the important issues for large data storage. [1][2][3][4] As the feature size of the conventional flash memory scales down, the leakage current of a select transistor in the flash memory increases and it usually originates from a subthreshold leakage. 5,6) Standby power reduction can be realized by adopting advanced technologies, and two device technologies have been considered in this work.…”

Section: Introductionmentioning

confidence: 99%

Disturbance characteristics of charge trap flash memory with tunneling field-effect transistor

Cho

Choi

et al. 2014

Jpn. J. Appl. Phys.

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In this study, the disturbance characteristics of silicon–oxide–nitride–oxide–silicon (SONOS) memory based on the tunneling field-effect transistor (TFET) are investigated in terms of the Fowler–Nordheim (FN) program. Since the TFET SONOS memory uses a depletion channel region for program inhibition, the tunneling of an inhibited cell considers both the electron concentration and the vertical electric field. The effects of both parameters on tunneling current are analyzed using device simulation and the tunneling current equation. The tunneling current of the source-side region depends on the electric field and that of the drain-side region depends on the electron concentration. These results can be applied to the performance optimization of the TFET SONOS memory.

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Carrier Transport Mechanisms of the Programming and Retention Characteristics for TaN–Al₂O₃–Si₃N₄–SiO₂–Si Flash Memory Devices

Cited by 2 publications

References 27 publications

Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors

Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors

Disturbance characteristics of charge trap flash memory with tunneling field-effect transistor

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