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High-efficiency back-contact heterojunction crystalline Si (c-Si) solar cells with record-breaking conversion efficiencies of 26.7% for cells and 24.5% for modules are reported. The importance of thin-film Si solar cell technology for heterojunction c-Si solar cells with amorphous Si passivation layers in improving conversion efficiency and reducing production cost is demonstrated. Our attempts to reduce the production cost of a heterojunction c-Si solar cell by applying a SiO x layer prepared by a plasma-enhanced CVD method are presented. The characteristics of heterojunction c-Si solar cells are clarified by comparing them with those of practical homojunction solar cells, and crucial targets for industrialization of back-contact heterojunction c-Si solar cells are discussed. Owing to the recent improvement of c-Si solar cells and perovskite solar cells, conversion efficiencies over 30% have become a realistic target by using a two-terminal tandem structure with a heterojunction c-Si solar cell and a perovskite solar cell.

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In this work, we present the results of the replacement of silver screen printing on heterojunction crystalline silicon (c-Si) solar cells with a copper metallization scheme that has the potential to reduce the manufacturing cost while improving their performance. We report for the first time silverfree heterojunction c-Si solar cells on 6-in. wafers. The conversion efficiency reached is a record 22.1% for c-Si technology for this wafer size (V oc ¼ 729 mV, J sc ¼ 38:3 mA/cm 2 , FF ¼ 79:1%). The total power generated is more than 5 W for 1-sun illumination, which is a world record. Heatdamp reliability tests show comparable performance for mini-modules fabricated with copper metalized as for conventional silver screen printed heterojunction c-Si solar cells. #

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