Exceeding conversion efficiency of 26% by heterojunction interdigitated back contact solar cell with thin film Si technology

Yoshikawa, Kunta; Yoshida, Wataru; Irie, Takahiro; Kawasaki, Hayato; Konishi, Katsunori; Ishibashi, Hirotaka; Asatani, Tsuyoshi; Adachi, Daisuke; Kanematsu, Masanori; Uzu, Hisashi; Yamamoto, Kenji

doi:10.1016/j.solmat.2017.06.024

Cited by 433 publications

(295 citation statements)

References 21 publications

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“…It is noted that the utilization of the pyramidal structure of SHJ bottom cell simultaneously increased light trapping in the infrared region and reduced primary reflection losses, thus resulting in an accumulative integrated photocurrent of 40.4 mA cm −2 (Figure d). This value approaches to the record photocurrent of 42.5 mA cm −2 for silicon‐based devices and surpasses what can be realistically achieved with front‐side‐polished silicon‐perovskite tandem solar cells without using any complex light trapping architecture . As a result, a high current density of 19.5 mA cm −2 and a certified stabilized PCE of 25.2% (measured at MPP condition) have been obtained (Figure e), which is among the highest efficiency for silicon/perovskite tandem solar cells 42b.…”

Section: Diverse Perovskite Morphologies For Optoelectronic Applicationsmentioning

confidence: 90%

A Review of Diverse Halide Perovskite Morphologies for Efficient Optoelectronic Applications

Zhang

Kuang

2019

Small Methods

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Recent years have witnessed an incredibly high fever in metal halide perovskite materials due to their promising applications in a wide range of optoelectronic applications. The morphologies and optoelectronic properties of the perovskite layers play critical roles in affecting the optoelectronic performances. This review summarizes the recent advances in the fabrication of a variety of perovskite morphologies and their promising progress achieved in different optoelectronic applications, including solar cells, light‐emitting diodes, photodetectors, lasers, photocatalysis, X‐ray detectors/imagers, and luminescent solar concentrators. Several blossoming representatives, including 0D perovskite quantum dots, 1D perovskite nanowires, 2D perovskite nanosheets/nanoplatelets, and 3D textured perovskite assemblies (i.e., cuboid‐like, inverse opal‐like, coral‐like, or maze‐like morphologies, etc.), are highlighted to demonstrate their fascinating properties and outstanding capabilities for efficient optoelectronic applications. Finally, a perspective on the remaining challenges and future directions of fabricating unique perovskite morphologies for next‐generation high‐performance optoelectronic devices is provided.

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Section: Diverse Perovskite Morphologies For Optoelectronic Applicationsmentioning

confidence: 90%

A Review of Diverse Halide Perovskite Morphologies for Efficient Optoelectronic Applications

Zhang

Kuang

2019

Small Methods

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“…In this type of solar cells (SCs), the dual‐functional PSC film holds the post of the surface passivation layer by suppressing the minority carrier recombination with the adequate band structure alignment and the contact modification layer by assisting majority carrier transport with lowering the contact resistivity. As of today, the on‐going innovation on PSC materials and process technologies makes it possible to promote the development of many advanced Si photovoltaic technologies, such as heterojunction with intrinsic thin film (HIT) and polycrystalline silicon on oxide (POLO), which have been received the remarkably high efficiencies of 26.6% and 26.1%, respectively. However, these PSC materials, that is, intrinsic a‐Si:H and doped a‐Si:H for HIT and tunnel SiO 2 and doped poly‐Si for POLO suffer from some inevitable issues, such as parasitic optical adsorption or Auger recombination losses .…”

Section: Introductionmentioning

confidence: 99%

Low‐Temperature Oxidation‐Processed Titanium Oxides as Dual‐Functional Electron‐Selective Passivation Contacts

et al. 2019

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Passivation contact (PSC), which simultaneously achieves high passivation quality and low contact resistivity, has been proven to be a delicate design to fabricate high‐efficiency solar cells (SCs). However, traditional PSC materials, that is, intrinsic a‐Si:H/doped a‐Si:H or tunnel SiO2/doped poly‐Si, overly rely on the complex procedures and have inevitable optical or Auger recombination losses. Herein, a novel low‐temperature oxidation (LTO) process is developed and an electron‐selective TiOx film (LTO‐TiOx) is fabricated, reaching a low‐effective surface recombination velocity of 13.7 cm s−1. The high‐quality passivation performance is mainly attributed to the chemical passivation of Ti–O–Si bonds and the surface carrier manipulation ability of the LTO‐TiOx film. Next, by adding a low work function (WF) layer of LiFx film, the surface band bending effect is formed and the contact resistivity of TiOx‐based PSC is also optimized. Furthermore, the dual‐functional LTO‐TiOx/LiFx electron‐selective PSC is integrated in Si SCs and a champion efficiency is achieved near 19% with an open‐circuit voltage near 640 mV. Finally, a comprehensive simulation analysis indicates a high efficiency of more than 22% based on LTO‐TiOx PSC, followed by a detailed roadmap of efficiency improvements, demonstrating its huge application potential in SCs.

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“…Higher photoelectric conversion efficiency and lower production cost are the main objectives for the development of photovoltaic (PV) industry. Among the varieties of silicon solar cell technologies, silicon heterojunction (SHJ) solar cell can play a significant role in PV market due to its high open circuit voltage ( V oc = 750 mV), high fill factor (FF = 84.6%), low process energy consumption, and improved temperature coefficient . However, bifacial SHJ solar cell suffers from relatively low short circuit current density ( J sc ) and high series resistance.…”

Section: Introductionmentioning

confidence: 99%

Dual‐Function Light‐Trapping: Selective Plating Mask of SiO_x/SiN_x Stacks for Silicon Heterojunction Solar Cells

Zhang

Chen

et al. 2019

Solar RRL

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Reducing the production cost of highly efficient silicon heterojunction (SHJ) solar cells is essential for their large‐scale commercialization. Replacing screen printed silver contacts with plated copper is an effective way. However, one needs to deal with the process compatibility without sacrificing the cell performance. In this work, a layer stack of silicon oxide and silicon nitride (SiOx/SiNx) is proposed, serving dual functions of light‐trapping and selective copper plating mask. The SiOx/SiNx stack is prepared by plasma enhanced chemical vapor deposition (PECVD) on a tungsten doped indium oxide (IWO) layer. Optimized SiOx/SiNx/IWO stacks in SHJ solar cells with silver contacts result in excellent anti‐reflection properties and improved external quantum efficiency. A short circuit current density gain of 1.16 mA cm−2 is achieved without the loss in fill factor. This SiOx/SiNx stack is tested as in‐situ deposited selective plating mask for a front‐side copper plating process. An in‐house made light induced plating tool is utilized. A screen printed silver finger is applied as a seed layer for copper plating. The bulk resistivity of Cu/Ag finger reduces to 4.1 E‐6 Ω · cm, which is lower than that of low temperature silver paste (around 6 E‐6 Ω · cm) before copper is plated on it. The dual functions of SiOx/SiNx stack and the process are proven, indicating a good potential for further improving photoelectric properties of SHJ solar cells after well optimization.

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Exceeding conversion efficiency of 26% by heterojunction interdigitated back contact solar cell with thin film Si technology

Cited by 433 publications

References 21 publications

A Review of Diverse Halide Perovskite Morphologies for Efficient Optoelectronic Applications

A Review of Diverse Halide Perovskite Morphologies for Efficient Optoelectronic Applications

Low‐Temperature Oxidation‐Processed Titanium Oxides as Dual‐Functional Electron‐Selective Passivation Contacts

Dual‐Function Light‐Trapping: Selective Plating Mask of SiO_x/SiN_x Stacks for Silicon Heterojunction Solar Cells

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Exceeding conversion efficiency of 26% by heterojunction interdigitated back contact solar cell with thin film Si technology

Cited by 433 publications

References 21 publications

A Review of Diverse Halide Perovskite Morphologies for Efficient Optoelectronic Applications

A Review of Diverse Halide Perovskite Morphologies for Efficient Optoelectronic Applications

Low‐Temperature Oxidation‐Processed Titanium Oxides as Dual‐Functional Electron‐Selective Passivation Contacts

Dual‐Function Light‐Trapping: Selective Plating Mask of SiOx/SiNx Stacks for Silicon Heterojunction Solar Cells

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Product

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Dual‐Function Light‐Trapping: Selective Plating Mask of SiO_x/SiN_x Stacks for Silicon Heterojunction Solar Cells