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Thin-film light-emitting diodes (LEDs) containing solution-processed ZnO nanocrystals (NCs) were prepared as printed electronics. The electroluminescent (EL) properties of thin-film LEDs were investigated along with the structural and photoluminescence (PL) properties of the ZnO NCs. Scanning electron microscope and x-ray diffraction studies revealed that the crystal sizes D were ranged from 5–11 nm, and can be controlled by varying growth time tG in the Zn2+/OH− solution at 40 °C. The time evolution of D was analyzed using Lifshitz–Slyozov–Wagner theory, showing that growth is limited by diffusion. The results of PL studies indicated that increases in the peak energies in the ultraviolet (UV) region could be attributed to the quantum-size effects on the exciton emission in the NCs with a small D, the ZnO surfaces became sufficiently passivated as D increases. Printed layers containing well-passivated ZnO NCs with different D of 8–11 nm were used as emission layers in thin-film LEDs together with pentacene hole transport layers. The current-voltage characteristics were analyzed using the trapped-charge-limited current mechanism. EL spectral measurements revealed the presence of weak UV emission that increased slightly as D decreased.

ZnO is an excellent material candidate for ultraviolet (UV)‐light emitting devices based on its exciton emission. We have applied solution‐processed ZnO NCs to printed electroluminescence (EL) devices as their emission layers (EMLs) to develop a novel flexible lightweight, and flat‐panel UV‐light source. In this article, first, the structural properties of ZnO NCs fabricated from a solution route are presented together with the results of photoluminescence (PL). We address to suppression of the defect‐related green‐band PL from ZnO NCs by controlling the crystal size. Next, we describe device properties of the printed EL devices. Specifically, we present the impact on the use of pentaceneon the device properties; pentacene acts as the hole‐transport layer, resulting in the exciton emissions in EL. In addition, it passivates the rear surface of ZnO NC EML, which is effective in suppressing the green‐band EL. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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