6 inch High efficiency back contact crystalline Si solar cell applying heterojunction and thinfilm technology

Yoshikawa, Kunta; Kawasaki, Hayato; Yoshida, Wataru; Konishi, Katsunori; Nakano, Kazuyoshi; Uto, Toshihiko; Adachi, Daisuke; Irie, Takahiro; Kanematsu, Masanori; Uzu, Hisashi; Terashita, Toru; Meguro, T.; Yoshimi, Masashi; Yamamoto, Kenji

doi:10.1109/pvsc.2016.7750290

Cited by 4 publications

(5 citation statements)

References 19 publications

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“…As reference perovskite cell we take the 9 mm 2 cell made by KRICT with an initial efficiency of 22.7% (V oc = 1144 mV, J sc = 24.92 mA/cm 2 , FF = 79.6%) [11,12]. The reference silicon solar cell is a six inch back contacted silicon heterojunction cell made by Kaneka Corporation with an efficiency of 24.9% (V oc = 737 mV, J sc = 42.13 mA/cm 2 , FF = 80.2%) [22]. Note that this is not the record efficiency, but an efficiency realistically achievable in mass production.…”

Section: A Single Junction Reference Cellsmentioning

confidence: 99%

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Optimization of Three-Terminal Perovskite/Silicon Tandem Solar Cells

Santbergen

Uzu

Yamamoto

et al. 2019

IEEE J. Photovoltaics

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We use simulations to optimize perovskite / silicon tandem solar cells in a novel three-terminal configuration, with one terminal at the front and two at the rear. We consider configurations in which the top cell has either the inverted or the same polarity as the bottom cell. Our goal is to minimize the optical losses, to compare the performance of both configurations and to determine the realistically achievable efficiency. Optical simulations show that if the hole transporting material is in front of the perovskite it gives rise to parasitic absorption losses. If it is behind the perovskite, these losses are avoided, however at the cost of increased reflection losses. We systematically minimize these reflection losses. This increases the tandem's total implied photocurrent density from 34.4 to 41.1 mA/cm 2 . To determine the corresponding power conversion efficiency of these three-terminal tandems, electrical circuit simulations are performed based on existing 22.7% efficient perovskite and 24.9% efficient silicon cells. These simulations show that tandem efficiencies up to 32.0% can be obtained.

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Section: A Single Junction Reference Cellsmentioning

confidence: 99%

“…Using the method described in Ref. 22, this loss is subdivided into reflection loss: R 1 from the interfaces in front of the perovskite layer, R 2 from the interfaces between perovskite and silicon layer, and R 3 , from the interfaces behind the silicon layer. Fig.…”

Section: A Standard Designmentioning

confidence: 99%

Optimization of Three-Terminal Perovskite/Silicon Tandem Solar Cells

Santbergen

Uzu

Yamamoto

et al. 2019

IEEE J. Photovoltaics

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“…BCHJ c-Si solar cell in 2016. 13) Recently, using a combination of our HJ technology, low-resistance electrode technology, and backcontact technology, we have achieved a record-breaking cell conversion efficiency of 26.6% 2,14,15) and a module conversion efficiency of 24.4% in c-Si solar cells. 2) The conversion efficiencies of practical homojunction solar cells such as passivated emitter rear cells (PERCs) and passivated emitter rear total diffusion (PERT) cells are also improving in both the R&D level and mass-production level.…”

Section: Introductionmentioning

confidence: 99%

High-efficiency heterojunction crystalline Si solar cells

Yamamoto

Yoshikawa

Uzu

et al. 2018

Jpn. J. Appl. Phys.

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127

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High-efficiency back-contact heterojunction crystalline Si (c-Si) solar cells with record-breaking conversion efficiencies of 26.7% for cells and 24.5% for modules are reported. The importance of thin-film Si solar cell technology for heterojunction c-Si solar cells with amorphous Si passivation layers in improving conversion efficiency and reducing production cost is demonstrated. Our attempts to reduce the production cost of a heterojunction c-Si solar cell by applying a SiO x layer prepared by a plasma-enhanced CVD method are presented. The characteristics of heterojunction c-Si solar cells are clarified by comparing them with those of practical homojunction solar cells, and crucial targets for industrialization of back-contact heterojunction c-Si solar cells are discussed. Owing to the recent improvement of c-Si solar cells and perovskite solar cells, conversion efficiencies over 30% have become a realistic target by using a two-terminal tandem structure with a heterojunction c-Si solar cell and a perovskite solar cell.

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“…In this context, Panasonic, Japan, reported in 2014 on a 25.6 %-efficient back-contacted crystalline silicon solar cell using an amorphous/crystalline silicon heterojunction (SHJ) as passivating contact materials (Masuko et al, 2014), hence breaking the long lasting record of the UNSW PERC solar cell (Zhao et al, 1998) and convincingly demonstrating the potential of back-contacted devices with passivating contacts. Soon afterwards, still using hydrogenated amorphous silicon (a-Si:H) as passivating materials, Kaneka, Japan, successively released in 2016 and 2017 three backcontacted devices, all with efficiencies beyond 26.0 % (Yoshikawa et al, 2016(Yoshikawa et al, , 2017a(Yoshikawa et al, , 2017b. This race to record efficiency culminated with the demonstration by Kaneka, Japan, of an impressive 26.7 %-efficient back-contacted solar cell (Green et al, 2017).…”

Section: Introductionmentioning

confidence: 99%

Interdigitated back contact silicon heterojunction solar cells featuring an interband tunnel junction enabling simplified processing

et al. 2018

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This paper reports on the development of an innovative back-contacted crystalline silicon solar cell with passivating contacts featuring an interband tunnel junction at its electron-collecting contacts. In this novel architecture, named "tunnel-IBC", both the hole collector patterning and its alignment to the electron collector are eliminated, thus drastically simplifying the process flow. However, two prerequisites have to be fulfilled for such devices to work efficiently, namely (i) lossless carrier transport through the tunnel junction and (ii) low lateral conductance within the hole collector in order to avoid shunts with the neighboring electron-collecting regions. We meet these two contrasting requirements by exploiting the anisotropic and substrate-dependent growth mechanism of n-and p-type hydrogenated nano-crystalline silicon layers. We investigate the influence of the deposition temperature and the doping gas concentration on the structural and the selectivity properties of these layers. Eventually, tunnel-IBC devices integrating hydrogenated nano-crystalline silicon layers have been processed and demonstrate up to 23.9 % conversion efficiency.

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6 inch High efficiency back contact crystalline Si solar cell applying heterojunction and thinfilm technology

Cited by 4 publications

References 19 publications

Optimization of Three-Terminal Perovskite/Silicon Tandem Solar Cells

Optimization of Three-Terminal Perovskite/Silicon Tandem Solar Cells

High-efficiency heterojunction crystalline Si solar cells

Interdigitated back contact silicon heterojunction solar cells featuring an interband tunnel junction enabling simplified processing

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