The TaN/HfON/GeO 2 /n-Ge pMOSFETs with different formation processes of GeO 2 interfacial layer are studied. A very low EOT of ~0.5 nm with a highly stoichiometric GeO 2 interfacial layer is achieved by in-situ H 2 O plasma grown GeO 2 together with ALD-formed HfON. The peak hole mobility of Ge pMOSFET is 312 cm 2 /V*s.
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