The TaN/HfON/GeO 2 /n-Ge pMOSFETs with different formation processes of GeO 2 interfacial layer are studied. A very low EOT of ~0.5 nm with a highly stoichiometric GeO 2 interfacial layer is achieved by in-situ H 2 O plasma grown GeO 2 together with ALD-formed HfON. The peak hole mobility of Ge pMOSFET is 312 cm 2 /V*s.
An ultra-low EOT of ~0.39 nm in Ge MOS devices is achieved, and simultaneously the leakage current is decreased. The improvement can be attributed to the in-situ Ge sub-oxide desorption process in an ALD chamber at 370 o C. About 95% Ge 4+ in HfGeO x interfacial layer are obtained by H 2 O plasma process together with in-situ desorption before atomic layer deposition.
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