Despite the widespread interest in graphene electronics over the past decade, high-performance graphene field-effect transistors (GFETs) on flexible substrates have been rarely achieved, even though this atomic sheet is widely understood to have greater prospects for flexible electronic systems. In this article, we report detailed studies on the electrical and mechanical properties of vapor synthesized high-quality monolayer graphene integrated onto flexible polyimide substrates. Flexible graphene transistors with high-k dielectric afforded intrinsic gain, maximum carrier mobilities of 3900 cm(2)/V·s, and importantly, 25 GHz cutoff frequency, which is more than a factor of 2.5 times higher than prior results. Mechanical studies reveal robust transistor performance under repeated bending, down to 0.7 mm bending radius, whose tensile strain is a factor of 2-5 times higher than in prior studies. In addition, integration of functional coatings such as highly hydrophobic fluoropolymers combined with the self-passivation properties of the polyimide substrate provides water-resistant protection without compromising flexibility, which is an important advancement for the realization of future robust flexible systems based on graphene.

We present several on-chip antenna structures that may be fabricated with standard CMOS technology for use at millimeter wave frequencies. On-chip antennas for wireless personal area networks (WPANs) promise to reduce interconnection losses and greatly reduce wireless transceiver costs, while providing unprecedented flexibility for device manufacturers. We present the current state of research in on-chip integrated antennas, highlight several pitfalls and challenges for on-chip design, modeling, and measurement, and propose several antenna structures that derive from the microwave and HF communication fields. We also describe an experimental test apparatus for performing measurements on RFIC systems with on-chip antennas at The University of Texas at Austin.Index Terms-WPAN, 60 GHz, RFIC, on-chip antenna, millimeter wave, mmWave communications, passive radiating elements.

Interest in graphene device physics and technology has been growing rapidly, especially for very high frequency transistor applications. However, the predicted intrinsic performance has not been fully realized due to impurity and parasitic issues introduced in device fabrication. Through a self-consistent model, we show that the normalized contact resistance has an exponentially detrimental impact on the peak transconductance, which is a defining transistor parameter. In addition, we reveal that very high current-gate voltage linearity or input invariant transconductance can be achieved in the limit of negligible contact resistances, a desirable feature for linear electronic systems.

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Highly bendable graphene field-effect transistors are fabricated on polyimide films. The device offers robust performance against various conditions including immersion in liquids, and dynamic loading tests, which are hazardous to conventional electronics. Bendability of the sample is tested with the bending radius of down to 1.3 mm; the devices remain fully functional with less than 8.7% reduction and no reduction in the electron and hole mobility after repeated bending tests, respectively. Multi-finger electrodes are implemented on flexible substrates to enhance its current drive. Silicon-nitride passivation offers efficient chemical protection over diverse liquids and robust mechanical protection against impacts.