High-Performance Current Saturating Graphene Field-Effect Transistor With Hexagonal Boron Nitride Dielectric on Flexible Polymeric Substrates

Lee, Jong-Ho; Ha, Tae‐Jun; Parrish, Kristen N.; Chowdhury, Sk. Fahad; Tao, Li; Dodabalapur, Ananth; Akinwande, Deji

doi:10.1109/led.2012.2233707

Cited by 59 publications

(42 citation statements)

References 25 publications

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“…Over the last decade of intense focus and investigation, graphene material understanding and devices have advanced sufficiently to substantiate its potential for analogue RF circuits 4,13,32,37,39 . However, the limitation of graphene to realize a digital switch owing to its lack of a bandgap caused great concern 4 .…”

Section: Contemporary Flexible Performancementioning

confidence: 99%

“…By taking advantage of the unique ambipolar properties of graphene, several workers have demonstrated reconfigurable modulation circuits useful for wireless communication systems 37,39 . One particular example by Zhong and coworkers 37 is shown in Fig.…”

Section: Contemporary Flexible Performancementioning

confidence: 99%

“…2D heterostructures can enable flexible and transparent electronic, memory, optical, sensor and energy conversion devices. Recent work on soft substrates has focused on graphene-, h-BN-and TMD-layered heterostructures for flexible device applications 18,39,66 . The simplest and perhaps the most obvious heterostructure is a bilayer consisting of a stacked channel and dielectric such as graphene and its ideal dielectric, h-BN.…”

Section: Contemporary Flexible Performancementioning

confidence: 99%

“…However, the lack of a bandgap and the associated inability to electrically switch off precludes its use for digital transistors 4 . Nevertheless, its high charge mobility and saturation velocity (410 7 cm s À 1 ) coupled with its intrinsic ambipolar character make it an attractive material for flexible RF analogue TFTs 32,38 , which have already been employed to demonstrate several RF circuit blocks such as frequency multipliers 39 , and multi-modulation wireless circuits 37 . In addition, non-transistor applications including transparent conductive films, heat spreaders, acoustic speakers and mechanical actuators can all be enabled by flexible graphene, where the lack of a bandgap is not a limitation.…”

mentioning

confidence: 99%

“…In addition, direct bandgap monolayer TMDs can be used for optoelectronics. For atomically thin insulating sheets, multilayer h-BN has been proven to be the ideal dielectric for enhanced charge transport for 2D TFTs, owing to its atomically smooth surface, large phonon energies, high dielectric breakdown field and high in-plane thermal conductivity compared with conventional dielectrics 3,18,39 .…”

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confidence: 99%

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Two-dimensional flexible nanoelectronics

2014

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represents the tenth anniversary of modern graphene research. Over this decade, graphene has proven to be attractive for thin-film transistors owing to its remarkable electronic, optical, mechanical and thermal properties. Even its major drawback-zero bandgap-has resulted in something positive: a resurgence of interest in two-dimensional semiconductors, such as dichalcogenides and buckled nanomaterials with sizeable bandgaps. With the discovery of hexagonal boron nitride as an ideal dielectric, the materials are now in place to advance integrated flexible nanoelectronics, which uniquely take advantage of the unmatched portfolio of properties of two-dimensional crystals, beyond the capability of conventional thin films for ubiquitous flexible systems.T wo-dimensional (2D) atomic sheets are atomically thin, layered crystalline solids with the defining characteristics of intralayer covalent bonding and interlayer van der Waals bonding 1-3 . The expanding portfolio of atomic sheets illustrated in Fig. 1a currently include the archetypical 2D crystal graphene 3-14 , transition metal dichalcogenides (TMDs) 1,2,15-21 , diatomic hexagonal boron nitride (h-BN) 3,[22][23][24][25] , and emerging monoatomic buckled crystals collectively termed Xenes, which include silicene 2,26,27 , germanene 2 and phosphorene [28][29][30][31] . These materials are considered 2D because they represent the thinnest unsupported crystalline solids that can be realized, possess no dangling surface bonds and show superior intralayer (versus interlayer) transport of fundamental excitations (charge, heat, spin and light). The portfolio is expected to grow as more elemental and compound sheets are uncovered.The outstanding properties of 2D crystals have generated immense interest for both conventional semiconductor technology and the nascent flexible nanotechnology because, amongst other considerations, these atomic sheets afford the ultimate thickness scalability desired in a variety of essential material categories, including semiconductors, insulators, transparent conductors and transducers 3,16,18 . In particular, flexible nanoelectronics stand to greatly benefit from the development of 2D crystals because their unmatched combination of device physics and device mechanics is accessible on soft polymeric or plastic substrates 17,18,32,33 , which can enable the long sought after large-area high-performance flexible devices that can be manufactured at economically viable scales. As a result, existing flexible technology is expected to be transformed from low-cost commodity applications, such as radio-frequency identification tags and sensors, to integrated nanosystems with electronic performance comparable to silicon devices, in addition to affording mechanical flexibility and manufacturing form-factor beyond the capability of conventional semiconductor technology 34 . Hence, a new era in integrated flexible technology founded on 2D crystals is emerging.

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Section: Contemporary Flexible Performancementioning

confidence: 99%

Section: Contemporary Flexible Performancementioning

confidence: 99%

Section: Contemporary Flexible Performancementioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Two-dimensional flexible nanoelectronics

2014

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Graphene‐Based Flexible and Stretchable Electronics

et al. 2016

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Graphene provides outstanding properties that can be integrated into various flexible and stretchable electronic devices in a conventional, scalable fashion. The mechanical, electrical, and optical properties of graphene make it an attractive candidate for applications in electronics, energy-harvesting devices, sensors, and other systems. Recent research progress on graphene-based flexible and stretchable electronics is reviewed here. The production and fabrication methods used for target device applications are first briefly discussed. Then, the various types of flexible and stretchable electronic devices that are enabled by graphene are discussed, including logic devices, energy-harvesting devices, sensors, and bioinspired devices. The results represent important steps in the development of graphene-based electronics that could find applications in the area of flexible and stretchable electronics.

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Recent Advances in Doping of Molybdenum Disulfide: Industrial Applications and Future Prospects

2016

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Owing to their excellent physical properties, atomically thin layers of molybdenum disulfide (MoS ) have recently attracted much attention due to their nonzero-gap property, exceptionally high electrical conductivity, good thermal stability, and excellent mechanical strength, etc. MoS -based devices exhibit great potential for applications in optoelectronics and energy harvesting. Here, a comprehensive review of various doping strategies is presented, including wet doping and dry doping of atomically crystalline MoS thin layers, and the progress made so far for their doping-based prospective applications is also discussed. Finally, several significant research issues for the prospects of doped-MoS in industry, as a guide for 2D material community, are also provided.

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High-Performance Current Saturating Graphene Field-Effect Transistor With Hexagonal Boron Nitride Dielectric on Flexible Polymeric Substrates

Cited by 59 publications

References 25 publications

Two-dimensional flexible nanoelectronics

Two-dimensional flexible nanoelectronics

Graphene‐Based Flexible and Stretchable Electronics

Recent Advances in Doping of Molybdenum Disulfide: Industrial Applications and Future Prospects

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