SiN, Bare Si, and Si02 substrate-effects in chemically amplified (CA) resist have been investigated by surface analysis and evaluating the pattern profile of CA negative tone resist. It is considered that substrate-effects are distinguished from adhesion, optics and substrate components. It is found that the undercut profile of negative tone resist on SiN substrate can not be due to adhesion and optics. Fine profile can be replicated on SiN substrate treated with oxygen plasma optimized condition. Undercut profile can not be affected mainly by adsorbed materials on SiN substrate from Thermal Desorption Spectroscopy (TDS) analysis results. From the results of Electron Spectroscopy for Chemical Analysis (ESCA), it is found that SiN bonding is replaced to Si-0 bonding while SiN substrate is treated with oxygen plasma. The pattern profile on SiN substrate by oxygen plasma treatment is improved by the thin Si02 layer formed on SiN substrate. Relations between footing length and oxygen plasma treatment condition suggest that undercut profile is caused by the atom content of nitrogen on the surface of SiN substrate. Excessive oxygen plasma treatment of SiN substrate occurs the footing profile for the negative tone resist because of surface damage. At the interface between the SiN substrate and the CA resist, the SiN substrate works as base existing H2O, and quenches photogenerated acids. Additionally, it is considered that the NHS on SiN substrate quenches the photo-generated acids directly. The mechanism of substrate-effect is clarified.
SiN substrate effect in chemically amplified (CA) resist has been investigated by surface analysis and evaluating the pattern profile of CA negative tone resist. Fine profile can be replicated on SiN substrate treated with oxygen plasma optimized condition. Undercut profile can be affected by adsorbed materials on SiN substrate from Thermal Desorption Spectroscopy (TDS) analysis results. From the results of Electron Spectroscopy for Chemical Analysis (ESCA), it is found that Si-N bonding is replaced to Si-O bonding while SiN substrate is treated with oxygen plasma. Relations between footing length and oxygen plasma treatment condition suggest that undercut profile due to the concentration of nitrogen on the surface of SiN substrate. At the interface between the SiN substrate and the CA resist, the SiN substrate works as base existing H20, and quenchs photo-generated-acids. The mechanism of substrate effect of SiN is clarified. Reducing the SiN-substrate effect by treating the surface with oxygen plasma, fine resist pattern without undercut and footing is formed on SiN substrate.
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