Our crystalline In–Ga–Zn oxide (IGZO) thin film has a c‐axis‐aligned crystal (CAAC) structure and maintains crystallinity even on an amorphous base layer. Although the crystal has c‐axis alignment, its a‐axis and b‐axis have random arrangement; moreover, a clear grain boundary is not observed. We fabricated a back‐channel‐etched thin‐film transistor (TFT) using the CAAC‐IGZO film. Using the CAAC‐IGZO film, more stable TFT characteristics, even with a short channel length, can be obtained, and the instability of the back channel, which is one of the biggest problems of IGZO TFTs, is solved. As a result, we improved the process of manufacturing back‐channel‐etched TFTs.
Oxide semiconductors as represented by InGaZnO have been developed and used for driving TFT of LCD. Since there have been discussions on comparison of oxide semiconductors with amorphous and/or poly-silicon which have been conventionally used for LCD, this paper will summarize pros and cons of each semiconductor material, deepen discussions for future developments, and clarify advantages of oxide semiconductors.
Recent studies have shown that IGZO are variously influenced by photoirradiation. In this study, by using measurement results of optical properties and calculation results, a relationship of defect levels in the IGZO films and the SiO 2 films to negative-bias photodegradation was examined, and the mechanism of the degradation was revealed.
We have calculated the linear absorption coefficients of various
resist polymers using the mass absorption coefficients at 13 nm and
the density obtained from the graph-theoretical treatment derived
by Bicerano. The values indicate that the transmittance at 13 nm of
conventional resists used in 193-nm, 248-nm and 365-nm
lithography is about 30% when the thickness is 3000 Å and 60–70%
when it is 1000 Å. This shows that conventional resists are suitable
for an EUVL (extreme ultraviolet lithography) thin-layer resist (TLR)
process using a hard-mask layer, but their large photoabsorption
makes them unsuitable for a single-layer resist (SLR) process. To
design polymers that are suitable for an SLR process, we further
calculated the absorption of about 150 polymers. The results
suggest that the introduction of aromatic groups into a polymer not
only reduces the absorption at 13 nm but also increases the etching
resistance.
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