Substrate effect in chemically amplified resist

Mori, Shigeyasu; Watanabe, Takeo; Adachi, Kouichirou; Fukushima, Takashi; Uda, Keichiro; Sato, Yuichi

doi:10.1117/12.241812

Cited by 11 publications

(5 citation statements)

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“…[17][18][19][20] The loss of protons at the resist-surface 21) was a significant issue in the early stage of the development of the chemically amplified resist process. The proton supply from the underlayer 22) and the proton loss at the substrate surface 23) have been reported. The surface free energy of the organic underlayer was reported to affect the dissolution kinetics of a typical resist backbone polymer near the underlayer.…”

Section: Introductionmentioning

confidence: 99%

Interfacial effects on sensitization of chemically amplified extreme ultraviolet resists

Kozawa¹

2022

Jpn. J. Appl. Phys.

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With the improvement of lithography resolution in horizontal direction, the thickness of resist films becomes thin to avoid the pattern collapse. The thinning of resist films is an important issue in the development of next-generation lithography process. In this study, the interfacial effects on the sensitization of chemically amplified extreme ultraviolet (EUV) resists were investigated using a Monte Carlo method on the basis of their sensitization mechanism. The chemically amplified resist is a standard resist used for the fabrication of semiconductor devices. In chemically amplified resists, thermalized electrons reduce sensitizer molecules upon exposure to EUV radiation. The low-energy secondary electron dynamics at the vacuum-resist and resist-underlayer interfaces strongly affected the distribution of decomposed sensitizers. In particular, the resist bulk layer almost disappeared at 20 nm pitch in the specific cases. The control of interfaces becomes important in the development of next-generation lithography process.

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Section: Introductionmentioning

confidence: 99%

Interfacial effects on sensitization of chemically amplified extreme ultraviolet resists

Kozawa¹

2022

Jpn. J. Appl. Phys.

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“…Copyright 2015, The Japan Society of Applied Physics. the substrate surface 151) was a problem. The interaction of the resist polymer molecules with the underlayer was reported to affect the dissolution kinetics near the underlayer during the development, which is discussed later.…”

Section: Interfacial Effectsmentioning

confidence: 99%

Design strategy of extreme ultraviolet resists

Kozawa

2024

Jpn. J. Appl. Phys.

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The high-volume production of semiconductor devices with extreme ultraviolet (EUV) lithography started in 2019. During the development of EUV lithography, the resist materials had always been ranked high in the focus area for its realization. The trade-off relationships between resolution, line width roughness, and sensitivity were the most serious problem. The EUV lithography started with the use of chemically amplified resists after the material chemistry was optimized on the basis of radiation chemistry. The increase of numerical aperture has been scheduled to enhance the optical resolution. For the realization of next-generation lithography, the suppression of stochastic effects is the most important issue. A highly absorptive material is a key to the suppression of stochastic effects. The development of next-generation EUV resists has progressed around chemically amplified resists, metal oxide resists, and main-chain-scission type resists. EUV resists are reviewed from the viewpoint of material design for the suppression of stochastic effects.

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“…Top-view simulations suffer from not modeling the decay of exposure with depth and standing waves. Similarly, the reaction of the resist material with airborne contaminations, such as NH 3 , NMP and the nucleophilic species residing in the substrate ( T i N, Si 3 N 4 ) [8,9], is difficult to be included in studies of two-dimensional patterns. This paper extends the STORM simulator to three-dimension (STORM3D) through improvements in the formulation to eliminate variables and in the solver to reduce memory requirements.…”

Section: Introductionmentioning

confidence: 99%

Three-dimensional post-exposure modeling and its applications

et al. 2001

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A three-dimension post-exposure bake (PEB) simulator (STORM3D) is described with improved algorithms for effectively simulating chemically-amplified resists (CAR) on desktop computers. A new FEM algorithm that is based on variable elimination is presented and shown to reduce the simulation time by roughly a factor of four. A dramatic increase in the size of problems that can be treated with limited memory is demonstrated by the use of a frontal method. Results for latent images of the deprotection concentration are presented for T-topping and footing in the presence of pre-diffused contaminants in elbow patterns. A methodology is suggested for estimating diffusion parameters through simulation interpretation of the cross-shape profile from a sequential double exposure of orthogonal lines. The sensitivity of the methodology is illustrated through comparing corner shapes for UVIIHS and APEX-E. The improvements in STORM3D allow 9,000 node 3D problems to be simulated in about one hour for 60s PEB on a 700Mhz Dec-alpha with 256M memory.

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Substrate effect in chemically amplified resist

Cited by 11 publications

References 0 publications

Interfacial effects on sensitization of chemically amplified extreme ultraviolet resists

Interfacial effects on sensitization of chemically amplified extreme ultraviolet resists

Design strategy of extreme ultraviolet resists

Three-dimensional post-exposure modeling and its applications

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