The collocation method has been applied to derive a new SPICE (Simulation Program with Integrated Circuit Emphasis)-compatible non-quasi-static MOS (metal-oxide-semiconductor) transient model. Contrasting to the conventional approximation methods, the collocation method is simple for the model derivation and efficient in optimizing the variables of the continuity equation. The derived model is fully physics-based in that all the transient currents are directly expressed by only physically meaningful, optimized quantities. The model adequately predicts transient currents in the bias region such as the weak inversion region where conventional models show numerical difficulties.
A CST Microwave Studio model was generated to simulate the discharge current and the transient fi eld of an ESD generator. The ESD generator is conforming to the IEC 61000-4-2 standard. Individual components of the Noiseken ESD generator (ESS-2000) were modelled, validated and combined. The complete full wave model was verifi ed by comparing the simulated discharge current waveform and induced loop voltage with the measured results.
This paper presents a novel heterogeneous volume deformation technique and an intuitive volume animation authoring framework. Our volume deformation extends the previous technique based on moving least squares with a density‐aware weighting metric for data‐driven importance control and efficient upsampling‐based volume synthesis. For user interaction, we present an intuitive visual metaphor and interaction schemes to support effective spatiotemporal editing of volume deformation animation. Our framework is implemented fully on graphics processors and thus suitable for quick‐and‐easy prototyping of volume deformation with improved controllability.
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