Systematic Analysis Methodology for Mobile Phone's Electrostatic Discharge Soft Failures

Kim, Ki Hyuk; Kim, Yongsup

doi:10.1109/temc.2011.2143719

Cited by 20 publications

(5 citation statements)

References 6 publications

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“…The transient EM fields produced by the ESD generator during the discharge procedure are also important factors in the induced ESD coupling on the EUT [4,9,10,13,[20][21][22]. Experimental methods [23][24][25], full wave numerical modeling [26][27][28][29][30][31], circuit modeling [5,[32][33][34][35][36], and hybrid simulations of the EUT and ESD source [25,30] can all be used to carry out the ESD coupling study. However, it appears that modeling full wave has some constraints in computation resources and modeling accuracy based on the state of the art [12].…”

Section: Introductionmentioning

confidence: 99%

Electromagnetic Fields Radiated by Electrostatic Discharges: A Review of the Available Approaches

Fotis

2023

Electronics

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Electrostatic discharge (ESD) is a physical phenomenon that may destroy electronic components due to its high discharge current that may reach a few amperes in just a few ns. However, another major aspect of ESD is the related high-frequency electromagnetic (E/M) fields radiated by the ESD event. The electronic equipment that is affected by the ESD phenomenon is additionally affected by the induced voltages caused by these E/M fields. This is the reason that the current version of the IEC 61000-4-2 on ESD has a special reference to these fields and the measurement setup. Starting with the classical formulation of these fields, this paper reviews the most popular techniques for calculating the ESD electromagnetic fields while also emphasizing the best methods for minimizing computational effort. There is also a separate section for the measurement techniques that have been applied in research works, whose outcomes could be implemented in the next revision of the IEC 61000-4-2. It is extremely important for the next revision to include these measurement setups and the E/M field sensors because the ESD generators should comply with certain values related to the E/M fields they produce.

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Section: Introductionmentioning

confidence: 99%

Electromagnetic Fields Radiated by Electrostatic Discharges: A Review of the Available Approaches

Fotis

2023

Electronics

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“…The failure could be a soft or hard (permanent damage of DUT). The soft failure examples include: the incorrect reading or writing of the data to the hard disk (wrong instructions due to command/data bit change); abrupt turn off of the device; and/or the change in the operational condition of the device with a display of wrong output on DUT screen [1,[5][6][7][8]. The change of the ESD generator model could also affect the qualification of the DUT [3,9].…”

Section: Introductionmentioning

confidence: 99%

“…To increase the robustness of the products against injected ESD noise, different experimental and full-wave numerical modeling techniques for system level ESD coupling analysis have been proposed in the literature. These include: failure analysis using susceptibility testing [5]; analysis of coupled ESD noise to DUT through time and frequency domain measurements [1,[10][11][12][13][14]; and full-wave EM simulation of DUT and ESD source [2,6,[15][16][17][18]. These reported techniques have limitations in terms of the requirement of the manufacturing of the DUT to perform susceptibility analysis [5], or the characterization of the coupled noise at victim positions for each different design configuration of the DUT [10][11][12][13][14]19].…”

Section: Introductionmentioning

confidence: 99%

“…The localized near field susceptibility scanning approach of [5] also has a limitation of inaccurate prediction of the root cause of failure for the high density ball-grid array integrated circuits (ICs), where the signal/data traces are routed on multiple inner layers. In addition, the size of the injection probes used in susceptibility analysis becomes quite large compared to the small size of such ICs [6,20]. The ESD analysis using full-wave EM simulation provides more insight into the ESD noise coupling paths across multiple layers unlike [5], and thus making it more appropriate for the fast and efficient analysis of ESD coupling to DUT, compared to only experimental techniques [1,5,6,[10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

“…In addition, the size of the injection probes used in susceptibility analysis becomes quite large compared to the small size of such ICs [6,20]. The ESD analysis using full-wave EM simulation provides more insight into the ESD noise coupling paths across multiple layers unlike [5], and thus making it more appropriate for the fast and efficient analysis of ESD coupling to DUT, compared to only experimental techniques [1,5,6,[10][11][12][13][14]. The existing studies related to ESD coupling analysis using full-wave numerical modeling, are either for a simple transmission line, circular loop and mobile phone-based DUT s [16][17][18]21] or lacks in the methodology for the systematic assessment of the sensitive traces for a realistic complete high-speed memory module.…”

Section: Introductionmentioning

confidence: 99%

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Design of Experiment (DOE) Analysis of System Level ESD Noise Coupling to High-Speed Memory Modules

et al. 2019

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This paper presents, for the first time, a comprehensive detailed design of experiment (DOE) based system level electrostatic discharge (ESD) coupling analysis of high-speed dynamic random access (DRAM) memory modules. The sensitive traces and planes on the high-speed DRAM modules (DDR3 and DDR4) against injected ESD noise are determined through full-wave numerical simulations of the memory modules using the developed 3D model of the ESD gun. The validity of the full-wave numerical setup is confirmed through measurements, prior to the DOE analysis. Besides, current distribution analysis of DRAMs, seven different DOE configurations based on the number of installed decoupling capacitors (decaps) and their values on memory modules, are analyzed. The findings of DOE analysis suggests that DDR4 is less susceptible (70–80 % less) to the coupled ESD noise compared to DDR3. In addition, the command address (CA) nets are most sensitive in both memory modules. The utilization of the maximum possible number of decaps covering low, medium and high frequency ranges, as well as separate power and ground layers in memory stack-up design, increase the robustness and immunity of memory modules for the transient ESD event. The suggested approach offers time-saving and financial advantages to high-speed memory community, with the robust design of the memory products at the design stage before the start of the production phase.

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Soft Failure Mechanisms and PCB Design Measures

Pommerenke

Maheshwari

2015

System Level ESD Co‐Design

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Systematic Analysis Methodology for Mobile Phone's Electrostatic Discharge Soft Failures

Cited by 20 publications

References 6 publications

Electromagnetic Fields Radiated by Electrostatic Discharges: A Review of the Available Approaches

Electromagnetic Fields Radiated by Electrostatic Discharges: A Review of the Available Approaches

Design of Experiment (DOE) Analysis of System Level ESD Noise Coupling to High-Speed Memory Modules

Soft Failure Mechanisms and PCB Design Measures

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