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Herein, the bipolar resistive switching of Y 0.95 Sr 0.05 MnO 3 (YSMO) film grown on a Si substrate by pulsed laser deposition is reported. The mixed valent state of Mn ions with the presence of oxygen vacancies is confirmed by near-edge X-ray absorption fine structure. The temperature-dependent mobility and other switching parameters are extracted using Murgatroyd expression and a space charge-limited mechanism in the high-resistance state. The YSMO thin film shows better resistive switching as the switching layer (a layer close to a positively biased electrode) thickness decreases. The bipolar resistive switching of the film suggests a strong dependence on localized switching thickness and temperature.