Extraction of Switching Parameters for Sr‐Doped YMnO₃ Thin Film

Abstract

Herein, the bipolar resistive switching of Y 0.95 Sr 0.05 MnO 3 (YSMO) film grown on a Si substrate by pulsed laser deposition is reported. The mixed valent state of Mn ions with the presence of oxygen vacancies is confirmed by near-edge X-ray absorption fine structure. The temperature-dependent mobility and other switching parameters are extracted using Murgatroyd expression and a space charge-limited mechanism in the high-resistance state. The YSMO thin film shows better resistive switching as the switching layer (a layer close to a positively biased electrode) thickness decreases. The bipolar resistive switching of the film suggests a strong dependence on localized switching thickness and temperature.

Electrochemical Metallization Memristive Devices with Al Active Electrode Using Engineered Mixed Hexagonal/Orthorhombic Polycrystalline YMnO3

“…[ 8 ] Furthermore, cations doped h‐YMO was recently studied by Rayapati et al for electroforming‐free filamentary unipolar resistive switching in Al/h‐YMO/Pt stacks [ 9 ] and by K. N. Rathod et al for interface‐type bipolar resistive switching in Ag/h‐YMO/Si. [ 10 ] Studies have been so far focused on polycrystalline hexagonal YMO thin films (stochiometric and off‐stochiometric YMO) with different bottom and top electrodes. However, given the challenges associated with achieving single‐phase polycrystalline h‐YMO thin films [ 11–15 ] and considering that X‐ray diffraction may not provide conclusive evidence for the absence of orthorhombic YMnO 3 phase (o‐YMO) ‐ as we will show later ‐ it is plausible that the reported resistive switching performances could be influenced by contributions from both crystalline phases.…”

“…[3,4] Recently, resistive switching behavior has been demonstrated in polycrystalline hexagonal YMnO 3 (h-YMO) thin films with promising applications for neuromorphic devices. [5][6][7][8][9][10] Combining resistive switching properties together with ferroelectricity could offer in a long term promising avenues for the development of multistate analog devices. Different electrodes, YMO composition/microstructure and different mechanisms have been reported for YMO-based memristive devices.…”

“…[8] Furthermore, cations doped h-YMO was recently studied by Rayapati et al for electroforming-free filamentary unipolar resistive switching in Al/h-YMO/Pt stacks [9] and by K. N. Rathod et al for interfacetype bipolar resistive switching in Ag/h-YMO/Si. [10] Studies have been so far focused on polycrystalline hexagonal YMO thin films (stochiometric and off-stochiometric YMO) with different bottom and top electrodes. However, given the challenges associated with achieving single-phase polycrystalline…”