Charge transport studies on chemically grown manganite based heterostructures

Interface based field effect configuration and charge conduction mechanisms for manganite thin film heterostructures

“…an external electric field (to achieve a field effect) has been applied across the chemically grown LMO/LCMO manganite interface and temperature dependent resistance modulations have been understood for the same LMO/LCMO manganite interface. This type of measurement has already been reported by Gadani et al [31][32][33] under different temperature windows and different applied interface electric fields whereas the present case deals with comparatively higher applied electric fields to understand the charge conduction modifications for the same LMO/LCMO manganite based interface. In this extended work, the main goal of the investigation is to achieve possible large ER values (based on field effect configuration) which can be useful for its potential practical applications.…”

“…In this extended work, the main goal of the investigation is to achieve possible large ER values (based on field effect configuration) which can be useful for its potential practical applications. The employed temperature window can be found to be narrow between 200 K and 300 K in the present report due to the fact that considerably large effects of applied electric fields (through field effect configuration) can be expected near T P (which is expected to be well above 300 K [31][32][33] ) where much electronic phase fluctuations can be anticipated within the manganite lattices. In addition, to meet the possibility of potential applications of the present thin film device (i.e.…”

“…In order to prepare the presently targeted LMO/LCMO/LAO manganite-manganite structure consisting of a 50 nm LMO layer grown on a LCMO 100 nm thin film on a LAO (100) single crystalline substrate, the cost effective, simple and vacuum free CSD method was used by employing the acetate precursor route. 12,15,[31][32][33][34][35][36] For the growth of the 100 nm thick LCMO mixed valent manganite layer, the acetate precursor route was employed with different steps and parameters as described in earlier reports. [31][32][33] Similarly, the 50 nm thick LMO manganite layer was grown on the thin film of LCMO/LAO using the same acetate precursor based simple sol-gel method with the parameters and steps as listed in earlier reports.…”

“…12,15,[31][32][33][34][35][36] For the growth of the 100 nm thick LCMO mixed valent manganite layer, the acetate precursor route was employed with different steps and parameters as described in earlier reports. [31][32][33] Similarly, the 50 nm thick LMO manganite layer was grown on the thin film of LCMO/LAO using the same acetate precursor based simple sol-gel method with the parameters and steps as listed in earlier reports. [31][32][33] The upper LMO layer was grown intentionally in an air environment to create finite oxygen vacancies in its lattice; however the almost stoichiometric 100 nm thick film of LCMO was grown in an oxygen environment.…”

“…[31][32][33] Similarly, the 50 nm thick LMO manganite layer was grown on the thin film of LCMO/LAO using the same acetate precursor based simple sol-gel method with the parameters and steps as listed in earlier reports. [31][32][33] The upper LMO layer was grown intentionally in an air environment to create finite oxygen vacancies in its lattice; however the almost stoichiometric 100 nm thick film of LCMO was grown in an oxygen environment. A schematic representation of the presently studied LMO/LCMO/LAO structure is shown in Fig.…”