Superconductivity is mutually exclusive with ferromagnetism, because the ferromagnetic exchange field is often destructive to superconducting pairing correlation. Well-designed chemical and physical methods have been devoted to realize their coexistence only by structural integrity of inherent superconducting and ferromagnetic ingredients. However, such coexistence in freestanding structure with nonsuperconducting and nonferromagnetic components still remains a great challenge up to now. Here, we demonstrate a molecule-confined engineering in two-dimensional organic-inorganic superlattice using a chemical building-block approach, successfully realizing first freestanding coexistence of superconductivity and ferromagnetism originated from electronic interactions of nonsuperconducting and nonferromagnetic building blocks. We unravel totally different electronic behavior of molecules depending on spatial confinement: flatly lying Co(Cp) molecules in strongly confined SnSe interlayers weaken the coordination field, leading to spin transition to form ferromagnetism; meanwhile, electron transfer from cyclopentadienyls to the Se-Sn-Se lattice induces superconducting state. This entirely new class of coexisting superconductivity and ferromagnetism generates a unique correlated state of Kondo effect between the molecular ferromagnetic layers and inorganic superconducting layers. We anticipate that confined molecular chemistry provides a newly powerful tool to trigger exotic chemical and physical properties in two-dimensional matrixes.

Two-dimensional transition metal dichalcogenides (TMDs) have been regarded as one of the best nonartificial low-dimensional building blocks for developing spintronic nanodevices. However, the lack of spin polarization in the vicinity of the Fermi surface and local magnetic moment in pristine TMDs has greatly hampered the exploitation of magnetotransport properties. Herein, a half-metallic structure of TMDs is successfully developed by a simple chemical defect-engineering strategy. Dual native defects decorate titanium diselenides with the coexistence of metal-Ti-atom incorporation and Se-anion defects, resulting in a high-spin-polarized current and local magnetic moment of 2D Ti-based TMDs toward half-metallic room-temperature ferromagnetism character. Arising from spin-polarization transport, the as-obtained T-TiSe nanosheets exhibit a large negative magnetoresistance phenomenon with a value of -40% (5T, 10 K), representing one of the highest negative magnetoresistance effects among TMDs. It is anticipated that this dual regulation strategy will be a powerful tool for optimizing the intrinsic physical properties of TMD systems.

Atomic intercalation in two dimensional (2D) layered materials can engineer the electronic structure at the atomic scale, bringing out tunable physical and chemical properties which are quite distinct in comparison with pristine one. Among them, electron-doped engineering induced by intercalation is an efficient route to modulate electronic states in 2D layers. Herein, we demonstrate a semiconducting to the metallic phase transition in zirconium diselenide (ZrSe2) single crystal via controllable incorporation of copper (Cu) atoms. Combined with first-principles density functional theory (DFT) calculations, our angle resolved photoemission spectroscopy (ARPES) characterizations clearly revealed the emergence of conduction band dispersion at M/L point of Brillouin zone due to Cu-induced electron doping in ZrSe2 interlayers. Moreover, the field-effect transistor (FET) fabricated on ZrSe2 displayed a n-type semiconducting transport behavior, while the Cu-intercalated ZrSe2 posed linear Ids vs Vds curves with metallic charactershows n-type doping. The atomic intercalation approach has high potential for realizing transparent electron-doping systems for many specific 2D-based electronics.

Using high-resolution angle-resolved photoemission spectroscopy (ARPES), we systematically studied the electronic structures of quasi-one-dimensional (1D) ternary material Ta2NiS5 single crystals.

We report the study of a triaxial vector magnetoresistance (MR) in nonmagnetic (BiIn)Se nanodevices at the composition of x = 0.08. We show a dumbbell-shaped in-plane negative MR up to room temperature as well as a large out-of-plane positive MR. MR at three directions is about in a -3%:-1%:225% ratio at 2 K. Through both the thickness and composition-dependent magnetotransport measurements, we show that the in-plane negative MR is due to the topological phase transition enhanced intersurface coupling near the topological critical point. Our devices suggest the great potential for room-temperature spintronic applications in, for example, vector magnetic sensors.

The band structures of two-monolayer Bi(110) films on black phosphorus substrates are studied using angleresolved photoemission spectroscopy. Within the band gap of bulk black phosphorus, the electronic states near the Fermi level are dominated by the Bi(110) film. The band dispersions revealed by our data suggest that the orientation of the Bi(110) film is aligned with the black phosphorus substrate. The electronic structures of the Bi(110) film strongly deviate from the band calculations of the free-standing Bi(110) film, suggesting that the substrate can significantly affect the electronic states in the Bi(110) film. Our data show that there are no non-trivial electronic states in Bi(110) films grown on black phosphorus substrates.

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