2018
DOI: 10.1039/c8tc00149a
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Electronic structures of layered Ta2NiS5 single crystals revealed by high-resolution angle-resolved photoemission spectroscopy

Abstract: Using high-resolution angle-resolved photoemission spectroscopy (ARPES), we systematically studied the electronic structures of quasi-one-dimensional (1D) ternary material Ta2NiS5 single crystals.

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Cited by 21 publications
(19 citation statements)
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“…3(f) should therefore not be interpreted as a larger hybridization effect at Z than at Γ; rather, the uppermost valence bands here are simply at a lower energy due to hopping processes perpendicular to the chains, that are largely unrelated to the monoclinic distortion. A similar dispersion is observed in the S-analogue, Ta 2 NiS 5 35 . Thus, for considering the effects of the band hybridisation at the 327 K phase transition, we focus on the bands around the Γ point, where the bands overlap in the tetragonal phase and thus dominant hybridisation effects can be expected, as are indeed found in the monoclinic phase.…”
supporting
confidence: 79%
“…3(f) should therefore not be interpreted as a larger hybridization effect at Z than at Γ; rather, the uppermost valence bands here are simply at a lower energy due to hopping processes perpendicular to the chains, that are largely unrelated to the monoclinic distortion. A similar dispersion is observed in the S-analogue, Ta 2 NiS 5 35 . Thus, for considering the effects of the band hybridisation at the 327 K phase transition, we focus on the bands around the Γ point, where the bands overlap in the tetragonal phase and thus dominant hybridisation effects can be expected, as are indeed found in the monoclinic phase.…”
supporting
confidence: 79%
“…As a potential excitonic insulator, Ta 2 NiS 5 monolayer is constituted by NiS 4 and TaS 6 units, which form linear chains along the a ‐axis and the zigzag chains in the c ‐axis. [ 54 ] The experimental results have confirmed its strong optical and electrical anisotropy, [ 55 ] which has not been observed in its binary counterpart TaS 2 . ZrGeTe 4 is another narrow bandgap semiconductor (0.7 eV) with a similar 1D chain‐like structure.…”
Section: Structures and Properties Of 2d Anisotropic Materialsmentioning
confidence: 70%
“…Nowadays, many 2D ternary transition metal chalcogenides (i.e., Ta 2 NiS 5 , TaIrTe 4 ) have been successfully fabricated and are good candidates for excitonic insulator and type II Weyl semimetals. 49,118,119 In particular, the crystal structure of bulk Ta 2 NiS 5 is shown in Fig. 3.…”
Section: Ternary Transition Metal Chalcogenidesmentioning
confidence: 99%