In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects

Abstract

Low-symmetry layered materials such as black phosphorus (BP) have been revived recently due to their high intrinsic mobility and in-plane anisotropic properties, which can be used in anisotropic electronic and optoelectronic devices.

Penta‐PdPSe: A New 2D Pentagonal Material with Highly In‐Plane Optical, Electronic, and Optoelectronic Anisotropy

“…Low‐symmetry 2D materials with intrinsic in‐plane anisotropy have become a major research direction in 2D field because of their applications in next‐generation anisotropic multifunctional devices, e.g., polarization‐sensitive photodetectors, linearly polarized pulse generators, high‐gain digital inverters, and anisotropic memorizers. [ 1–3 ] Currently, only several in‐plane anisotropic 2D materials have been discovered, including black phosphorous (BP), [ 4 ] 1Td WTe 2 , [ 5 ] GeSe 2 , [ 6 ] GeP, [ 7 ] GaTe, [ 8 ] ReQ 2 (Q = S, Se), [ 9,10 ] Ta 2 NiS 5 , [ 11 ] and TaIrTe 4 , [ 12 ] and so on. However, most of them have drawbacks in anisotropic device application, such as poor stability (few‐layer BP, [ 4 ] 1Td WTe 2 , [ 13 ] GeSe 2 , [ 6 ] GeP, [ 7 ] and GaTe [ 8 ] ), low anisotropic ratios (ReQ 2 [ 9,10 ] and Ta 2 NiS 5 [ 11 ] ), and low current on/off ratio (TaIrTe 4 [ 14 ] ), greatly restricting their applications in anisotropic optics, electronics, and optoelectronics.…”

A high performance self-powered photodetector based on a 1D Te–2D WS2 mixed-dimensional heterostructure

“…Due to the quantum confinement effect and the strong interlayer coupling effect, two-dimensional (2D) layered materials such as transition metal dichalcogenides (TMDs) (Molybdenum disulfide, Tungsten disulfide, etc) have attracted tremendous attentions with unique thickness dependent and strain-tunable physical properties [1][2][3][4][5][6][7]. In recent years, beyond the discovery of graphene, other novel monoelemental 2D layered materials such as black phosphorus (BP), arsenic (As), bismuth (Bi), tellurium (Te), antimonene (Sb), which show tunable band gap, theoretical high carrier mobility, atomically flat surface, strong spin orbital torque, high light absorption efficiency, have been experimentally explored as promising candidates for applications in filed effect transistors (FETs), spintronics and photodetectors (PDs) [8][9][10][11].…”

Two‐Step Synthesis of Large‐Area 2D Bi2S3 Nanosheets Featuring High In‐Plane Anisotropy

“…[ 1 ] Now, 2D materials with high in‐plane anisotropy are entering the focus of the wider 2D materials research community due to their promising applications in electronics and optoelectronics. [ 2 ] Layered materials with anisotropic intralayer crystal structures feature direction‐dependent electronic, optical, and phonon structures that result in marked differences in heat and charge transport along the different crystal axes. [ 3 ] The anisotropy also leads to optical excitation becoming highly polarization dependent.…”

“…[ 3 ] The anisotropy also leads to optical excitation becoming highly polarization dependent. [ 2b,4 ] These effects offer additional parameters that can be tuned and exploited in order to create novel devices such as polarization sensitive photodetectors and linearly polarized pulse generators. [ 1a ] Moreover, the observed direction dependent conductance of anisotropic 2D nanosheets can be used in direction‐sensitive sensors.…”