A high performance self-powered photodetector based on a 1D Te–2D WS₂ mixed-dimensional heterostructure

Abstract

One dimensional (1D)-two dimensional (2D) van der Waals (vdWs) mixed-dimensional heterostructures with advantages of atomically sharp interface, high quality and good compatibility have attracted tremendous attention in recent years. The...

Highly Efficient Full van der Waals 1D p‐Te/2D n‐Bi2O2Se Heterodiodes with Nanoscale Ultra‐Photosensitive Channels

“…In addition, as characterized by ultraviolet photoelectron spectroscopy (UPS) of Bi 2 O 2 Se NSs [10] Sb 2 Se 3 /WS 2 , [8b] AsP/InSe, [19b] InSe/PdSe 2 , [22] GaSe/VO 2 , [24] Te/MoS 2 , [25] MnSe/WS 2 , [26] Bi 2 O 2 Se, [27] Se/ReS 2 , [28] PtS 2 /WSe 2 , [29] and Te/WS 2 . [30] (Figure 4d Combining the above analysis and further taking the bandgap of thin Bi 2 O 2 Se NSs and Te NWs to be 0.8 eV [32b,40] and 0.35 eV, respectively, [35,41] we construct a type II band alignment before contact in Figure 4e . When applying a negative bias, the direction of the external electric field is identical to its built-in potential (Figure 4e(III)).…”

“…Moreover, the device shows a pronounced photovoltaic responsivity of 768.8 mA W -1 and a high detectivity of 1.5 × 10 9 Jones at the intensity of 6.9 mW cm -2 (Figure 5e). To benchmark the performance of the device with previously reported literature, comparisons of the critical figure of merits, R and D*, and response [43] Te/Ge, [44] PtSe 2 /GaAs, [34] WSe 2 /Bi 2 O 2 Se, [17] GeSe/MoS 2 , [43] Te/InSe, [45] MoTe 2 /Si, [46] Te/ZnO, [47] Se/InSe, [48] Ti 3 C 2 T x Mxene/ GaN, [49] PtSe 2 /GaAs, [34] Te/WS 2 , [30] Te/MoSe 2 , [50] and Se/InSe. [51]…”

“…e) Responsivity and f) detectivity of the device under varying light intensities at V ds = −100 mV under laser illumination of 635, 532, and 405 nm, respectively. g) Responsivity, detectivity, and h) rise and decay time of typical state-ofthe-art low-dimensional semiconductor-based photodetectors reported in literature including Te/ReS 2 ,[10] Sb 2 Se 3 /WS 2 ,[8b] AsP/InSe,[19b] InSe/PdSe 2 ,[22] GaSe/VO 2 ,[24] Te/MoS 2 ,[25] MnSe/WS 2 ,[26] Bi 2 O 2 Se,[27] Se/ReS 2 ,[28] PtS 2 /WSe 2 ,[29] and Te/WS 2 [30].…”

“…e) Corresponding responsivity and detectivity of the device under varying light intensities. f) Photovoltaic responsivity, detectivity,and h) rise and decay time of typical state-of-the-art low-dimensional semiconductor-based photodetectors reported in literature such as GaSe/MoS 2 ,[43] Te/Ge,[44] PtSe 2 /GaAs,[34] WSe 2 /Bi 2 O 2 Se,[17] GeSe/MoS 2 ,[43] Te/InSe,[45] MoTe 2 /Si,[46] Te/ZnO,[47] Se/InSe,[48] Ti 3 C 2 T x Mxene/ GaN,[49] PtSe 2 /GaAs,[34] Te/WS 2 ,[30] Te/MoSe 2 ,[50] and Se/InSe [51].…”

Weyl Semiconductor Te/Sb2Se3 Heterostructure for Broadband Photodetection and Its Binary Photoresponse by C60 as Charge‐Regulation Medium

“…For example, Hu et al synthesized a Van Der Waals heterostructure of Ti 3 C 2 -Te PD, reaching high on/off ratio of 9.51 × 10 7 . [26] Analogous Te-based heterostructure PDs have also been developed recently, [27,28] which effectively realized functional complementation of different materials system. Antimony selenide (Sb 2 Se 3 ) is widely used for high-efficiency optoelectronic device as efficient light-absorbing layer material due to the appropriate direct bandgap (about 1.0-1.3 eV) and ultra-high light absorption coefficient (>10 5 cm −1 in visible light region).…”