Superconductivity is mutually exclusive with ferromagnetism, because the ferromagnetic exchange field is often destructive to superconducting pairing correlation. Well-designed chemical and physical methods have been devoted to realize their coexistence only by structural integrity of inherent superconducting and ferromagnetic ingredients. However, such coexistence in freestanding structure with nonsuperconducting and nonferromagnetic components still remains a great challenge up to now. Here, we demonstrate a molecule-confined engineering in two-dimensional organic-inorganic superlattice using a chemical building-block approach, successfully realizing first freestanding coexistence of superconductivity and ferromagnetism originated from electronic interactions of nonsuperconducting and nonferromagnetic building blocks. We unravel totally different electronic behavior of molecules depending on spatial confinement: flatly lying Co(Cp) molecules in strongly confined SnSe interlayers weaken the coordination field, leading to spin transition to form ferromagnetism; meanwhile, electron transfer from cyclopentadienyls to the Se-Sn-Se lattice induces superconducting state. This entirely new class of coexisting superconductivity and ferromagnetism generates a unique correlated state of Kondo effect between the molecular ferromagnetic layers and inorganic superconducting layers. We anticipate that confined molecular chemistry provides a newly powerful tool to trigger exotic chemical and physical properties in two-dimensional matrixes.
Two-dimensional transition metal dichalcogenides (TMDs) have been regarded as one of the best nonartificial low-dimensional building blocks for developing spintronic nanodevices. However, the lack of spin polarization in the vicinity of the Fermi surface and local magnetic moment in pristine TMDs has greatly hampered the exploitation of magnetotransport properties. Herein, a half-metallic structure of TMDs is successfully developed by a simple chemical defect-engineering strategy. Dual native defects decorate titanium diselenides with the coexistence of metal-Ti-atom incorporation and Se-anion defects, resulting in a high-spin-polarized current and local magnetic moment of 2D Ti-based TMDs toward half-metallic room-temperature ferromagnetism character. Arising from spin-polarization transport, the as-obtained T-TiSe nanosheets exhibit a large negative magnetoresistance phenomenon with a value of -40% (5T, 10 K), representing one of the highest negative magnetoresistance effects among TMDs. It is anticipated that this dual regulation strategy will be a powerful tool for optimizing the intrinsic physical properties of TMD systems.
Atomic intercalation in two dimensional (2D) layered materials can engineer the electronic structure at the atomic scale, bringing out tunable physical and chemical properties which are quite distinct in comparison with pristine one. Among them, electron-doped engineering induced by intercalation is an efficient route to modulate electronic states in 2D layers. Herein, we demonstrate a semiconducting to the metallic phase transition in zirconium diselenide (ZrSe2) single crystal via controllable incorporation of copper (Cu) atoms. Combined with first-principles density functional theory (DFT) calculations, our angle resolved photoemission spectroscopy (ARPES) characterizations clearly revealed the emergence of conduction band dispersion at M/L point of Brillouin zone due to Cu-induced electron doping in ZrSe2 interlayers. Moreover, the field-effect transistor (FET) fabricated on ZrSe2 displayed a n-type semiconducting transport behavior, while the Cu-intercalated ZrSe2 posed linear Ids vs Vds curves with metallic charactershows n-type doping. The atomic intercalation approach has high potential for realizing transparent electron-doping systems for many specific 2D-based electronics.
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