H. pylori-infected ITP patients have a corpus-predominant pattern of gastritis but the virulence profile of their strains does not differ from that of ulcer or NUD patients. Eradication of H. pylori infection is a good therapeutic option for some patients with chronic ITP, especially for those who develop ITP in older age.

A case of infantile acute monocytic leukemia (AMoL), which was probably transmitted from a pregnant woman with leukemia to her unborn infant, is presented. A woman had AMoL when her third infant was born. This infant, who was a boy, also suffered from AMoL when he was 20 months of age. The infant's leukemic cells had the same cytochemical and immunophenotypic patterns as the mother's leukemic cells. By cytogenetic analysis, the majority of the infant's leukemic marrow cells had the 46,XX karyotype and showed no Y body by quinacrine staining. Moreover, the phenotype for human major histocompatibility system, HLA-A, HLA-B, and HLA-DR of the infant's leukemic cells was consistent with that of the mother's lymphocytes. Thus, the infant's leukemic clone was found to be identical to the mother's leukemic clone. His lymphocytes could not react with the mother's leukemic cells or his own leukemic cells in mixed lymphocyte culture, suggesting that the HLA homozygosity of the mother may have played a role in inducing immunologic tolerance to the immigrated leukemic cells in the infant. This is the first report of an infantile leukemia transmitted from a mother with leukemia, supposedly through the placenta.

We have fabricated buried channel (BC) MOSFETs with a thermally grown gate oxide in 4H-SiC. The gate oxide was prepared by dry oxidation with wet reoxidation. The BC region was formed by nitrogen ion implantation at room temperature followed by annealing at 1500 C. The optimum doping depth of the BC region has been investigated. For the nitrogen concentration of 1 10 17 cm 3 , the optimum depth was found to be 0.2 m. Under this condition, the channel mobility of 140 cm 2 /Vs was achieved with the threshold voltage of 0.3 V. This channel mobility is the highest reported so far for a normally-off 4H-SiC MOSFET with a thermally grown gate oxide.Index Terms-4H-SiC, buried channel (BC), channel mobility, MOSFET.

A concept, polarization junction (PJ), for overcoming the trade-off relationship between the area-specific on-resistance and the breakdown voltage of unipolar power devices is presented. The PJ concept is based on the charge compensation of positive and negative polarization charges at heterointerfaces. The PJ has a similar effect as superjunction without impurity doping. The performance of GaN-based conventional devices and PJ devices have been compared using numerical device simulations. Area-specific on-resistance of PJ devices became less than 1∕10 than that of conventional devices for the breakdown voltage higher than 300V.

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