Novel SiC power MOSFET with integrated unipolar internal inverse MOS-channel diode

Uchida, Masao; Horikawa, Nobuyuki; Tanaka, Kenichiro; Takahashi, Kunimasa; Kiyosawa, Tsutomu; Hayashi, Masashi; Niwayama, M.; Kusumoto, O.; Adachi, Kazuhiro; Kudou, Chiaki; Kitabatake, Makoto

doi:10.1109/iedm.2011.6131620

Cited by 52 publications

(27 citation statements)

References 5 publications

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“…This is preferable from an application point of view because higher V gsth provides large noise margin enabling stable switching operation. Besides, the package size of the former module is smaller than that of the latter module because the external anti-parallel diode chip paired with the MOSFET chip is not necessary [4]. This is essentially due to the fact that the channel diode in DioMOS functions almost similar to SiC SBD.…”

Section: Device Under Testmentioning

confidence: 91%

“…The concept of SiC DioMOS was proposed in 2011 [4]. Later this device was improved to meet more practical standards for high power switching devices, such as high threshold voltage (V gsth ), low on-state resistance (R dson ), and low forward voltage drop (V FO ) of the channel diode [15].…”

Section: Device Under Testmentioning

confidence: 99%

“…It has a MOSFET and an anti-parallel diode integrated on a single chip, while in the standard commercial SiC MOSFET module, they are on separate chips. Since the MOSFET and diode are integrated on a single chip, this device is also called DioMOS [4].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Hard and soft switching losses of a SiC MOSFET module under realistic topology and loading conditions

Tiwari

Langelid

Midtgård

et al. 2017

2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

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This paper investigates the switching performance of a 1.2 kV half-bridge SiC MOSFET module from Sanrex. Unlike in a standard SiC MOSFET module, where the MOSFET and the anti-parallel diode chips are fabricated separately, in the chosen MOSFET module (FCA150XB120), both the MOSFET and the diode are fabricated on a single chip. The device is characterized under both hard and soft switching conditions. For the hard switching characterization, an inductive clamped buck converter is employed, whereas for the soft switching characterization, a resonant half-bridge converter with LC load is used. A comparison of the hard switching loss is performed with the soft switching loss at the same current. This comparison provides insight into the significance of employing an appropriate circuit topology, load and control scheme to reflect the waveforms as in a real application, in order to get a more accurate assessment of the switching losses that will occur. This insight is the main contribution of this paper.

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Section: Device Under Testmentioning

confidence: 91%

Section: Device Under Testmentioning

confidence: 99%

See 1 more Smart Citation

Hard and soft switching losses of a SiC MOSFET module under realistic topology and loading conditions

Tiwari

Langelid

Midtgård

et al. 2017

2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

View full text Add to dashboard Cite

show abstract

“…Unlike in a standard SiC MOSFET module, where a MOSFET and an anti-parallel diode chips are fabricated separately, in the chosen MOSFET module, both the MOSFET and diode chips are fabricated on a single chip, so this MOSFET is also called DioMOS [11]. Table I shows the major differences between the selected SiC module and the standard SiC module (CAS120M12BM2) taken from the manufacturer datasheet [1,4].…”

Section: Device Under Testmentioning

confidence: 99%

Soft switching loss measurements of a 1.2 kV SiC MOSFET module by both electrical and calorimetric methods for high frequency applications

Tiwari

Langelid

Midtgård

et al. 2017

2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

View full text Add to dashboard Cite

This paper investigates the soft switching performance of a 1.2 kV half-bridge SiC MOSFET module, FCA150XB120 from Sanrex. The selected module has both MOSFET and diode integrated on a single chip. A single pulse control circuit is employed in a half-bridge series resonant inverter topology with a split dc-link and an LC load in order to emulate a real inverter operation. This results in a square wave output voltage and a sine wave output current where the switching is performed before the zero crossing of current (an inductive mode). In addition, a calorimetric loss measurement is carried out in a 78 kW full-bridge resonant inverter switching at about 200 kHz yielding an efficiency of 99 %. Moreover, this paper aims to find the highest possible switching frequency achievable with the selected module. Besides, the electrically measured loss is compared with the calorimetrically measured loss and the possible reasons for discrepancies are discussed.

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“…Wide-bandgap semiconductors, e.g., SiC and III-nitride semiconductors, are commonly considered as an attractive material for use in high-temperature, high-speed and high-voltage devices because of its advantageous property [1,2]. The low-temperature buffer layer method allows improvements in the properties of optoelectronic devices especially for the growth of III-nitride semiconductor on a sapphire substrate [3].…”

Section: Introductionmentioning

confidence: 99%

Selective growth of GaN on SiC substrates with femtosecond-laser-induced periodic nanostructures

Miyagawa

Okabe

Miyachi

et al. 2016

Trans. Mat. Res. Soc. Japan

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A 6H-SiC substrate with femtosecond-laser-induced periodic nanostructures was used as an underlayer for GaN growth. GaN nuclei were formed on the periodic nanostructure selectively. The in-plane direction of GaN was dependent on the in-plane direction of the SiC substrate, and no dependent on the direction of the periodic nanostructures or laser scanning. We suggest that the fine structure and high wettability at the region of the periodic nanostructure enhanced the adsorption of GaN nuclei preferentially. This technique will enable selective growth without masks or solution exposure.

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Novel SiC power MOSFET with integrated unipolar internal inverse MOS-channel diode

Cited by 52 publications

References 5 publications

Hard and soft switching losses of a SiC MOSFET module under realistic topology and loading conditions

Hard and soft switching losses of a SiC MOSFET module under realistic topology and loading conditions

Soft switching loss measurements of a 1.2 kV SiC MOSFET module by both electrical and calorimetric methods for high frequency applications

Selective growth of GaN on SiC substrates with femtosecond-laser-induced periodic nanostructures

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